BLF872,112

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The BLF872,112 is a N-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) for use in radio frequency (RF) applications. These transistors are specifically designed for use in RF amplifiers, such as cellular network base station, microwave point-to-point, digital TV transmitters and receivers, two-way radio, WLANs, and automotive battery powered applications.

The BLF872,112 offers a maximum output power of 50W, an operating voltage range of 12V to 42V, an on-resistance of 0.4Ohm, and a drain efficiency of up to 90%. In addition, the device features a fast switching speed and low gate charge. All of these characteristics make it an excellent choice for use in both linear and pulsed RF power amplifiers.

The working principle of a MOSFET relies on the phenomenon known as modulation of carrier concentration. Modulation of carrier concentration is achieved by the use of a gate voltage which modulates the resistance between the drain and source electrodes. As the gate voltage is varied, the resistance of the device will change accordingly. The size of the resistance change depends on the amount of voltage applied to the gate. At low gate voltages the device will have high resistance, while at higher voltages the resistance will be low.

At low gate voltage, the current flow from drain to source is limited by the large channel resistance of the MOSFET. This limits the amount of power available to the load and it is why the BLF872,112 has a maximum output power of 50W. At higher gate voltages, the resistance of the channel decreases and more current is allowed to flow through the device. This increases the power which is available to the load. The amount of power which can be achieved by the device is limited by the amount of gate voltage which can be applied. In the case of the BLF872,112, the maximum power achieved is 50W.

In summary, the BLF872,112 is an N-type MOSFET designed specifically for use in RF applications. It offers a maximum output power of 50W, a fast switching speed, and low gate charge. The device works by modulating the carrier concentration in the channel, which allows more current to flow through it at higher gate voltages, thus providing more power to the load. All of these characteristics make the BLF872,112 an ideal choice for use in both linear and pulsed RF power amplifiers.

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