Allicdata Part #: | BLF8G20LS-140GVJ-ND |
Manufacturer Part#: |
BLF8G20LS-140GVJ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 18.5DB SOT1244B |
More Detail: | RF Mosfet LDMOS 28V 900mA 1.81GHz ~ 1.88GHz 18.5dB... |
DataSheet: | BLF8G20LS-140GVJ Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.81GHz ~ 1.88GHz |
Gain: | 18.5dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 35W |
Voltage - Rated: | 65V |
Package / Case: | SOT-1244B |
Supplier Device Package: | CDFM6 |
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The BLF8G20LS-140GVJ is an N-channel MOSFET that is widely used in various applications. It is used in RF (radio frequency) systems, and its performance has proven to be highly reliable.
The BLF8G20LS-140GVJ is a depletion mode transistor with a low on-state capacitance. It has a fairly low drain-source voltage (Vds) of 20V and it can handle up to 8A (IDss) of continuous drain current. This makes it highly suitable for use in RF receiver applications that require low-noise amplification.
The BLF8G20LS-140GVJ has an unusually low gate-source capacitance. This reduces the phase distortion when switching high-frequency signals in multiple-stage amplifiers. The device also has a low gate threshold voltage of 0.3V and can be easily driven by low-voltage logic circuits.
The BLF8G20LS-140GVJ has applications in RF signal amplification and filtering. It can be used in IF (intermediate frequency) amplifiers, as well as in RF transmitters and receivers. The device can also be used in circuit designs to increase the gain of signal amplification stages and to reduce harmonic distortion.
The working principle of the BLF8G20LS-140GVJ is the same as any other MOSFET. When a voltage potential is applied to the gate, a thin channel is created between the source and drain. This allows current to travel between the two electrodes and is what allows the device to amplify signals. The drain-to-source breakdown voltage is another important characteristic of MOSFETs, and it determines the maximum voltage the device can handle before it is damaged.
Overall, the BLF8G20LS-140GVJ is a reliable, high-performing RF MOSFET that is suitable for use in a variety of applications. Its low noise characteristics and low power consumption make it a favorable choice for many circuit designs. The device has proved to be an excellent choice for RF communication systems, due to its high efficiency and good performance.
The specific data is subject to PDF, and the above content is for reference
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