BLF8G10LS-160,112

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	920MHz ~ 960MHz
Gain:	19.7dB
Voltage - Test:	30V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.1A
Power - Output:	35W
Voltage - Rated:	65V
Package / Case:	SOT-502B
Supplier Device Package:	SOT502B
Base Part Number:	BLF8G10

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BLF8G10LS-160,112 is a field effect transistor, also known as a FET, and is one of the first types of transistors to be developed. While FETs are commonly used in the electronics industry, this particular model is designed for radio frequency (RF) applications. It is designed to function at lower voltage and microwave frequencies, making it ideal for RF applications like RF amplifiers, phase shifters, and high power systems. This model of FET is particularly useful because of its low noise and low capacitance. The BLF8G10LS-160,112 has a specific technology that enables it to reduce the amount of energy lost due to line losses. This makes it an ideal choice for applications like high power amplifiers, which require high levels of power. Since it is designed to handle higher frequencies and voltages, it can also be used in various types of high power systems. The working principle of a FET is based upon the principle of electron mobility. In a FET, a thin layer of insulating material (often silicon dioxide) is placed between two conductive layers. The movement of electrons across the silicon dioxide layer is known as the “channel” and is responsible for the current flow between the two conductive layers. When a voltage is applied to the gate terminal of the FET, the movement of electrons in the channel is increased or decreased depending on the type of FET. This change in electron mobility creates a field within the device, which creates a current flow between the source and drain terminals. When looking at the BLF8G10LS-160,112 specifically, it is classified as an N-channel FET, meaning that when the gate terminal is triggered, the number of electrons travelling through the channel is decreased. This decrease in electron mobility increases the resistance of the FET and the current flow between the source and drain terminals is reduced. This makes the FET a great choice for applications such as linear regulation and current limiting. In summary, the BLF8G10LS-160,112 is a great choice for RF applications due to its low noise and low capacitance. Its N-channel design makes it a great choice for linear regulation and current limiting applications as well. Its efficient design and ability to handle higher frequencies and voltages make it an ideal choice for many different applications including high power amplifiers, phase shifters, and high power systems.

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