BLF8G22LS-270V,112

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BLF8G22LS-270V,112 is a high voltage N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is categorised as a RF (Radio Frequency) component. It is manufactured by NXP Semiconductors, a global semiconductor and technology company based in the Netherlands.

In general, MOSFETs are solid-state electrical components used to amplify or switch electronic signals, and RF MOSFETs are specifically used to communicate in radio frequency applications without interference.

A MOSFET is an input-controlled semiconductor device consisting of a source, a drain, a gate and the channel in-between. It works by providing a path for current flow between the source and the drain when the gate voltage is applied. Depending on the voltage applied, current will flow in either direction, making it a bi-directional switch.

The BLF8G22LS-270V,112 is a N-channel MOSFET which is designed to process more current than what its size would suggest. Its source is connected to the drain, allowing it to handle high current and switching quickly. This feature makes it suitable for use in high frequency applications, such as microwave communication and radio frequency systems.

The BLF8G22LS-270V,112 has a maximum drain to source breakdown voltage of 270V and a drain current of 175mA. It also has an on-state resistance of 12.3 ohms, a gate charge of 6.3nC and a gate to source voltage of -4.8V to 9V. These features make it suitable for use in applications that require high power and speed such as RF amplifiers and radio transmitters.

The BLF8G22LS-270V,112 also has good power handling capabilities and can operate at frequencies up to 10GHz. This makes it ideal for use in a variety of RF applications such as wireless communication, digital TV applications and radio broadcast systems.

The BLF8G22LS-270V,112 is a high voltage N-channel MOSFET, suitable for RF applications such as digital TV, wireless communication and radio broadcast systems. It is designed to provide increased current and switching speed, making it ideal for use in high power, high frequency applications. It has a maximum drain to source breakdown voltage of 270V and a gate charge of 6.3nC, making it suitable for use in a variety of RF applications.

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