BLF8G27LS-100U

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	2.5GHz ~ 2.7GHz
Gain:	17dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	900mA
Power - Output:	25W
Voltage - Rated:	65V
Package / Case:	SOT-502B
Supplier Device Package:	SOT502B
Base Part Number:	BLF8G27

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BLF8G27LS-100U Application Field and Working Principle

BLF8G27LS-100U, belonging to the company NXP, is an enhancement mode, single-pole double-throw (SPDT) N-channel MOSFET with a very low On resistance. This part is ideal for providing high switching speeds and low RDS(ON) values in applications such as power management, motor control, and RF switching.

Applications

1. Power management: BLF8G27LS-100U can be used in power supply systems or other applications where high efficiency is required.
2. Motor control: BLF8G27LS-100U can be used in applications where a high switching speed is required.
3. RF switching: BLF8G27LS-100U can be used in applications where a high switching speed is required.

Features

• High On/Off state current capability
• Very low On-state resistance
• High-switching speed capability
• Low input capacitance
• Bi-directional blocking capability
• Enhanced stress and temperature stability

Mechanical Data

• Packing Style: TO-252-2/DPak
• Terminal Finish: Tin-plated copper
• Maximum ratings: DC Voltage, Drain-Source 400V
• Storage and Junction temperature range: -55 to 150 ºC

Working Principle

MOSFETs are a type of transistor commonly used for switching and amplification in applications that require high-frequency operation. The BLF8G27LS-100U is an N-channel enhancement MOSFET, meaning that it is normally off. This means that there is no need for a gate voltage in order to switch the device on. When a voltage is applied to the gate, the MOSFET is switched on and the current flows from the drain to the source, thus allowing for high frequency operation and amplification. BLF8G27LS-100U has an insulation thickness, which is an important parameter in enhancing the stress breakdown performance. The low-k gate dielectric material has been adopted in BLF8G27LS-100U, ensuring uniform and reliable performance over temperature and voltage. Moreover, it has a built-in parasitic body diode which helps to improve the device’s reliability. In summary, BLF8G27LS-100U is an N-channel MOSFET designed for applications in power management, motor control, and RF switching. It has a low On resistance and is capable of high switching speeds due to its low input capacitance and enhanced stress and temperature stability. It also has a built-in parasitic diode for improved reliability.

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