BLF8G20LS-200V,115

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Transistors - FETs, MOSFETs - RF offers an impressive range of the latest semi-conductor devices for precision applications. The BLF8G20LS-200V,115 is a popular high performance device used for a wide range of industrial, commercial, and consumer applications. This device features an advanced low dropout (LDO) design with an adjustable Gate/Source voltage. It is one of the most reliable and versatile components available in the market today.

The BLF8G20LS-200V,115 is an N-channel MOSFET (field effect transistor) with a drain-source voltage of up to 200V and a gate-source voltage of up to 115V. It is a field effect transistor that operates in the enhancement mode, requiring a minimum gate-source voltage to turn on the device’s transistor channels. The BLF8G20LS-200V,115 is an ideal component for high power systems, such as automotive, industrial automation, consumer electronics, and so forth.

The BLF8G20LS-200V,115 provides excellent performance with low power dissipation, making it well-suited for many high-power applications. This component is constructed using molded epoxy for improved thermal control. It offers excellent voltage control characteristics, high-surge robustness, and high electro-migration resistance. It also features an effective breakdown voltage of 60 volts.

The BLF8G20LS-200V,115 is designed to provide superior gate control and low gate charge. It provides superior thermal stability at elevated temperatures and excellent response to single-event transients. This component also sticks to EMC requirements, including CISPR 32 and CISPR 22, and has a high ESD tolerance up to 3 kV.

The BLF8G20LS-200V,115 works on an analogy between a pull-up and a pull-down resistor. When the voltage applied to the gate is below the gate-source threshold voltage, the transistor is in a non-conductive state. A voltage source is then applied to the drain, causing the source voltage to drop below the gate-source threshold voltage. This in turn causes the channel to turn off and the transistor to enter a conductive state. As the voltage across the drain and source further decreases, the device turns off.

The BLF8G20LS-200V,115 is a highly efficient MOSFET component capable of delivering high power up to 1.2 W. It features an input capacitance of 1200 pF typical and an output capacitance of 85 pF typical. The BLF8G20LS-200V,115 has a low on-resistance of 48 mOhm typical and a low threshold voltage of -4.2 V typical. This component is fully RoHS compliant and compatible with industry standards.

The BLF8G20LS-200V,115 is suitable for use in a variety of industrial, commercial, and consumer applications. It is well-suited for use in power switching and voltage regulation applications. It can also be used in power converters, audio pre-amplifiers, and digital-to-analog converters. This highly reliable device is designed for use in places with high temperature and humidity, such as automotive, aerospace, and military applications.

The BLF8G20LS-200V,115 is a versatile and reliable device that can deliver exceptional performance. It has a high-performance design, low power dissipation, and EMC compliance. This device is suitable for a wide range of industrial, commercial, and consumer applications. It is a great choice for achieving high power efficiency, repeatability, and reliability.

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