BLF888EU

Series:	--
Packaging:	Tray
Part Status:	Active
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	600MHz ~ 700MHz
Gain:	17dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	600mA
Power - Output:	750W
Voltage - Rated:	104V
Package / Case:	SOT539A
Supplier Device Package:	SOT539A

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BLF888EU is a kind of Field-Effect transistor (FET) specialized in Radio Frequency (RF) applications. It is usually alled as RF FET. It contains a power level of 14 W, a gate-source voltage of +-20V and a drain current of 8A. This kind of FET can be used in high power transmission over large distances.The main characteristic of this FET is its high gain and power level, along with the low distortion rate, that is, the signal-to-noise ratio is high with respect to other FETs. This makes the BLF888EU suitable for both low noise and high output level applications.The BLF888EU consists of four different sections: the source, gate, drain and substrate. The source and drain are terminals through which current flows, while the gate is a control terminal that determines the current flow. The substrate acts as the base of the FET.The working principle of this FET is pretty simple. When a voltage is applied to the gate, it creates an electric field around the drain, which causes electrons to be attracted from the nearby P-region and N-region. As a result, a current starts to flow and the FET is activated.The amount of current that can be passed through the BLF888EU depends on the voltage applied to the gate. If the voltage applied is lower than the threshold voltage of the FET, no current will flow through it. As the voltage applied to the gate increases, the current passing through the FET increases as well.In addition to its high gain and power level, the BLF888EU also has a very low on-state resistance. This means that a lower amount of energy is dissipated in the form of heat, and therefore, it enables a lower power consumption, making it suitable for use in a wide range of applications.The BLF888EU has several advantages. Firstly, its high gain and power level make it suitable for many applications, including low noise and high power applications. Secondly, it has a low on-state resistance, which reduces the overall power consumption. Thirdly, the operation of the FET is very reliable and stable, making it a perfect choice for many high power, low distortion applications.Overall, the BLF888EU is an excellent RF FET for a wide range of applications. With its high gain and power level, low distortion rate, as well as low on-state resistance, it is a very reliable component that can be used for a variety of applications requiring high power, low noise and high output level.

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