BSC050N04LSGATMA1 Discrete Semiconductor Products

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BSC050N04LSGATMA1 is a field effect transistor (FET) with a single gate. It is a power MOSFET (metal-oxide-semiconductor FET) designed for general purpose applications. It has an integrated gate protection and features a current rating of 0.5A at a drain-source voltage of 50V. This makes it ideal for a wide range of applications in areas such as power conversion, DC motor control, switching, lights, and audio.

A field effect transistor works by using an electric field to control current through the strong electric field, rather than through a mechanical connection. The FET consists of a source, drain and gate. The gate, which is composed of a metal oxide semiconductor layer, is the control point. When a bias voltage is applied to the gate, it creates an electric field which modulates the current between the source and the drain. As the voltage applied to the gate increases, the resistance between the source and the drain decreases and vice versa.

BSC050N04LSGATMA1 is designed to minimize power dissipation by using a low threshold voltage. The low voltage results in a smaller electric field generated by the gate, which reduces energy dissipation in the device. The MOSFET also features a number of integrated gate protection functions. These include reverse break-over protection, avalanche, and electrode protection. The MOSFET also has a peak input current rating of 0.2A and is protected against short circuits.

BSC050N04LSGATMA1 is suitable for a wide range of applications. It is commonly used in switch-mode power supplies, DC-DC converters, DC motor control and switching applications. The MOSFET is also frequently found in light drivers, audio amplifiers, battery chargers and automotive applications. The device is well-suited to high-efficiency systems due to its low power dissipation and integrated gate protection functions.

BSC050N04LSGATMA1 is an effective power MOSFET designed for a wide range of applications. It combines a low threshold voltage with a number of integrated gate protection functions to make it suitable for high-efficiency power conversion and motor control. By using a field effect transistor (FET), it is able to control current flow without the need for a mechanical switch.

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