BSC098N10NS5ATMA1 Discrete Semiconductor Products

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BSC098N10NS5ATMA1 is a versatile class of semiconductor device, a MOSFET (metal-oxide-semiconductor field-effect transistor). MOSFET is a three-terminal electronic device, of the FET (field effect transistor) family, that consists of a source, drain and gate terminals. This particular MOSFET has been manufactured with a N-channel design and a wide range of power ratings and breakdown voltages, with an appropriate size and lead spacing.

As with any transistor, a major factor in its application is efficiency. The BSC098N10NS5ATMA1 exhibits low ON-state resistance and high switching speed, allowing for power saving and efficient power utilization. This makes it the perfect choice for switch-mode power supplies, DC motor control systems, high-frequency inverters, circuit protection systems, cell phone amplifier, and high-speed switching circuits.

The complete operation of BSC098N10NS5ATMA1 is based on the metal-oxide-semiconductor field-effect transistor (MOSFET) technology. Its major elements are a very thin layer of metal oxide, called a gate oxide, located between the source and drain. The metal oxide and the metal gate form a “channel” through which electrons can flow. The input voltage applied to the gate changes the resistance of the “channel” and thus controls the current flowing through it. The exact conduction behavior of the MOSFET is determined by the threshold voltage of transistor, which is the voltage required to switch the MOSFET from on to off status.

The BSC098N10NS5ATMA1 is a low-power MOSFET (with a maximum rating of 10A) that can handle peak currents of up to 20A. The operating voltage is between -55V (drain-source) and +55V (gate-source) while the breakdown voltage is up to 650V. It is optimized for high-speed switching applications, featuring a low gate threshold voltage of 3.0V, excellent noise characteristics, and good dielectric properties. The BSC098N10NS5ATMA1 is also equipped with a built-in thermal shutdown device to protect the device from temperature-induced over-voltage.

The BSC098N10NS5ATMA1 has a wide range of uses due to its unique characteristics. It is used as a single switch in power supplies, DC motor control systems, high-frequency inverters, cell phone amplifiers, and circuit protection systems. In addition, it is widely used in low-noise applications such as mini-circuitry, submicron gate current input stages, and dynamic RAM refresh circuits. Its low power consumption makes it a suitable choice for applications with limited energy consumption.

As such, the BSC098N10NS5ATMA1 offers a simple and efficient solution for a wide range of applications. Its low-power consumption, high switching speed, and low gate threshold voltage make it a reliable choice for any application. Its robust construction and thermal shutdown features make it ideal for extended use in high-speed switching applications. Its wide operating and breakdown voltage range also ensures reliable operation in demanding environments or applications.

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