BSC040N10NS5ATMA1 Allicdata Electronics
Allicdata Part #:

BSC040N10NS5ATMA1TR-ND

Manufacturer Part#:

BSC040N10NS5ATMA1

Price: $ 0.78
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 100A 8TDSON
More Detail: N-Channel 100V 100A (Tc) 2.5W (Ta), 139W (Tc) Surf...
DataSheet: BSC040N10NS5ATMA1 datasheetBSC040N10NS5ATMA1 Datasheet/PDF
Quantity: 1000
1 +: $ 0.78000
10 +: $ 0.75660
100 +: $ 0.74100
1000 +: $ 0.72540
10000 +: $ 0.70200
Stock 1000Can Ship Immediately
$ 0.78
Specifications
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BSC040N10NS5ATMA1 is a technology N-Channel enhancement mode MOSFET chip, which is commonly used in numerous electronic devices such as amplifiers, motor controllers, and DC-DC converters. The device is a power transistor specifically designed to be used in an application where a very low RDS(on) and low on-state losses are required.

Applications

The BSC040N10NS5ATMA1 transistor is a popular choice for numerous high-power applications, including:

  • Motor and DC converters
  • DCDC converters
  • High-power linear amplifiers
  • High-frequency switching applications such as edge-triggered logic
  • Control of high power loads, such as motors

The BSC040N10NS5ATMA1 have a low maximum voltage of 40V and maximum drain current of 10A. The low RDS(on) of 0.020 Ohm, makes them suitable for applications requiring low conduction losses such as DC-DC converter or motor driver designs.

Working Principle

A transistor is a semiconductor device made up of three main components: a base, a collector, and an emitter. The BSC040N10NS5ATMA1 operates as an enhancement mode MOSFET ( Metal-Oxide-Semiconductor Field Effect Transistor.)

An electrical signal is applied to the base-collector junction, which creates a small current that flows between the base and the collector. This current flow creates a magnetic field, which helps to attract the current flowing in the emitter. As the current increases, so does the magnetic field, which further attracts more of the current flowing in the emitter until the transistor is fully on. In this way, the small signal from the base-collector junction can then control a much larger current flow in the device.

When operating in a saturated state, the transistor runs at its full current capacity, and the voltage drop across the transistor is at its lowest possible value. This is ideal for applications where large currents and power needs to be controlled with very low voltage drops.

Conclusion

The BSC040N10NS5ATMA1 is a N-Channel MOSFET transistor specifically designed to be used in applications where a very low RDS(on) and low on-state losses are required. It is popularly used in numerous high-power applications, such as motor and DC converters, DC-DC converters, high-power linear amplifiers, high-frequency switching applications, and for the control of high power loads. With a maximum voltage of 40V and a maximum drain current of 10A, and a low RDS(on) of 0.020 Ohm, the BSC040N10NS5ATMA1 is an ideal device for applications that require low conduction losses.

The specific data is subject to PDF, and the above content is for reference

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