Allicdata Part #: | BSC085N025SG-ND |
Manufacturer Part#: |
BSC085N025S G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 35A TDSON-8 |
More Detail: | N-Channel 25V 14A (Ta), 35A (Tc) 2.8W (Ta), 52W (T... |
DataSheet: | BSC085N025S G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.8W (Ta), 52W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8 |
Package / Case: | 8-PowerTDFN |
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Introduction
BSC085N025S G is a single enhancement mode, field effect transistor (FET) which is specifically designed for high power switching applications. This type of transistor is ideal for switching and controlling high power, for the applications such as motor control and high voltage power controlling among other. It is capable of working at maximum drain-source voltages up to 140 V and it has a RDSon at 100 V of 0.85 C.
Application Field and Working Principle
The high power handling capacity of BSC085N025S G make it suitable for numerous very different applications. Not limited to its applications in motor control or high voltage power controlling, this type of transistors can also be used in LED driver, high side and low side switch, high frequency portable device and so on. It has a very low gate drive capability. This FET can function with a range of devices, such as microprocessor and controllers, to deliver load dependent devices, usually in the field of automotive, power and industrial.
In addition to its wide range of application field, BSC085N025S G has a fully capable working principle. It is an enhancement mode, field effect transistor (FET), which works based on the principle of the transistor effect. It is designed to deliver overload current protection and short-circuit protection in signal range. An electric field is established across the gate and drain by the bias voltage which cause a potential to be built up between them. This enable the electron current to flow between the source and the drain.
Based on the nature of FET, this type of transistor has a very high input capacitance so that it can handle high input current and switching rate. The BSC085N025S G also has a very high current capacity, up to 40 A. This makes it perfect for use in high power switching and controlling applications.
Conclusion
Overall, the BSC085N025S G is an ideal solution for high power electrical and electronic applications. Its remarkable features such as its RDSon, its high power handling capacity, its low gate drive capability, and its ability to work with a range of devices give it great flexibility in its application areas. The high quality and performance of BSC085N025S G make it a popular choice for many users.
The specific data is subject to PDF, and the above content is for reference
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