BSC010NE2LSATMA1 Allicdata Electronics

BSC010NE2LSATMA1 Discrete Semiconductor Products

Allicdata Part #:

BSC010NE2LSATMA1TR-ND

Manufacturer Part#:

BSC010NE2LSATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 39A TDSON-8
More Detail: N-Channel 25V 39A (Ta), 100A (Tc) 2.5W (Ta), 96W (...
DataSheet: BSC010NE2LSATMA1 datasheetBSC010NE2LSATMA1 Datasheet/PDF
Quantity: 10000
Stock 10000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 1 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSC010NE2LSATMA1 is a great tool for applications and is a single N-Channel Enhancement-Mode Power MOSFET. This device offers a range of benefits in the applications where it can be used and those include ease of use, good performance, and low cost. It is also suitable for low voltage and low current applications.

The BSC010NE2LSATMA1 can be used in a variety of applications. One of the most common applications it is used in is as a switch or switch-like device. This particular device allows users to turn a device on or off quickly. As well, it can be used as a driver of sorts due to its ability to handle low voltages and currents. It can also be used to create voltage and load regulation, as it can be easily regulated with the use of a resistor or another device.

It can be used in scenes that require powering a specific piece of equipment or a circuit. This particular device can function as a power source by regulating power in order to supply the needed voltage and current to the necessary components. It can also be used in multiple serial and parallel power switches.

The BSC010NE2LSATMA1 has an enhancement-mode design which helps it to quickly switch on and off. This design also helps it to better control the voltage and current going through it. The device also has a low on-state resistance and a high off-state breakdown voltage, which help to make it suitable for use in a variety of tasks.

In terms of its working principle, the BSC010NE2LSATMA1 functions as an enhancement-mode MOSFET. It has an insulated gate, a source and a drain which are two metal-oxide semiconductor connections. It also has a substrate which is generally made up of a silicon substrate. These components are what essentially create the device and its high performance.

The device works by having a standard metal oxide-semiconductor field-effect transistor, or MOSFET, gate. This gate controls the flow of current within the device itself. By having the MOSFET being enhancement-mode, the current within the device is able to be switched on and off.

When operating, the application of a voltage on the gate of the MOSFET increases the conductivity of the device. This allows current to flow. On the other hand, when the gate voltage is flipped, or reduced, the current flow can then be reduced or stopped altogether.

When looking at the BSC010NE2LSATMA1 from an operational standpoint, it is a relatively easy device to understand and work with. It is easy to set up and it has a wide range of applications as discussed above.

Overall, the BSC010NE2LSATMA1 is a great device for applications that require ease of use and good performance. It is suitable for low voltage and low current applications, and can serve as a great tool for powering specific pieces of equipment or a circuit. It has an enhancement-mode design which allows it to quickly switch on and off, and it has a low on-state and a high off-state breakdown voltage. Its working principle is that of a standard MOSFET, and its components allow it to have a high performance.

The specific data is subject to PDF, and the above content is for reference

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