
BSC010NE2LSATMA1 Discrete Semiconductor Products |
|
Allicdata Part #: | BSC010NE2LSATMA1TR-ND |
Manufacturer Part#: |
BSC010NE2LSATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 39A TDSON-8 |
More Detail: | N-Channel 25V 39A (Ta), 100A (Tc) 2.5W (Ta), 96W (... |
DataSheet: | ![]() |
Quantity: | 10000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4700pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 1 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 39A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BSC010NE2LSATMA1 is a great tool for applications and is a single N-Channel Enhancement-Mode Power MOSFET. This device offers a range of benefits in the applications where it can be used and those include ease of use, good performance, and low cost. It is also suitable for low voltage and low current applications.
The BSC010NE2LSATMA1 can be used in a variety of applications. One of the most common applications it is used in is as a switch or switch-like device. This particular device allows users to turn a device on or off quickly. As well, it can be used as a driver of sorts due to its ability to handle low voltages and currents. It can also be used to create voltage and load regulation, as it can be easily regulated with the use of a resistor or another device.
It can be used in scenes that require powering a specific piece of equipment or a circuit. This particular device can function as a power source by regulating power in order to supply the needed voltage and current to the necessary components. It can also be used in multiple serial and parallel power switches.
The BSC010NE2LSATMA1 has an enhancement-mode design which helps it to quickly switch on and off. This design also helps it to better control the voltage and current going through it. The device also has a low on-state resistance and a high off-state breakdown voltage, which help to make it suitable for use in a variety of tasks.
In terms of its working principle, the BSC010NE2LSATMA1 functions as an enhancement-mode MOSFET. It has an insulated gate, a source and a drain which are two metal-oxide semiconductor connections. It also has a substrate which is generally made up of a silicon substrate. These components are what essentially create the device and its high performance.
The device works by having a standard metal oxide-semiconductor field-effect transistor, or MOSFET, gate. This gate controls the flow of current within the device itself. By having the MOSFET being enhancement-mode, the current within the device is able to be switched on and off.
When operating, the application of a voltage on the gate of the MOSFET increases the conductivity of the device. This allows current to flow. On the other hand, when the gate voltage is flipped, or reduced, the current flow can then be reduced or stopped altogether.
When looking at the BSC010NE2LSATMA1 from an operational standpoint, it is a relatively easy device to understand and work with. It is easy to set up and it has a wide range of applications as discussed above.
Overall, the BSC010NE2LSATMA1 is a great device for applications that require ease of use and good performance. It is suitable for low voltage and low current applications, and can serve as a great tool for powering specific pieces of equipment or a circuit. It has an enhancement-mode design which allows it to quickly switch on and off, and it has a low on-state and a high off-state breakdown voltage. Its working principle is that of a standard MOSFET, and its components allow it to have a high performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BSC019N06NSATMA1 | Infineon Tec... | 0.75 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC039N06NSATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 19A TDSON... |
BSC014N03LSGATMA1 | Infineon Tec... | 0.5 $ | 1000 | MOSFET N-CH 30V 100A TDSO... |
BSC019N04LSATMA1 | Infineon Tec... | 0.55 $ | 1000 | MOSFET N-CH 40V 27A 8TDSO... |
BSC084P03NS3GATMA1 | Infineon Tec... | 0.34 $ | 5000 | MOSFET P-CH 30V 14.9A TDS... |
BSC030N04NSGATMA1 | Infineon Tec... | 0.32 $ | 1000 | MOSFET N-CH 40V 100A TDSO... |
BSC057N03MSGATMA1 | Infineon Tec... | 0.22 $ | 1000 | MOSFET N-CH 30V 71A TDSON... |
BSC022N03S | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 50A TDSON... |
BSC057N08NS3GATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 80V 100A TDSO... |
BSC0500NSIATMA1 | Infineon Tec... | 0.62 $ | 1000 | MOSFET N-CH 30V 35A TDSON... |
BSC0921NDIATMA1 | Infineon Tec... | 0.5 $ | 1000 | MOSFET 2N-CH 30V 17A/31A ... |
BSC0910NDIATMA1 | Infineon Tec... | 0.71 $ | 1000 | MOSFET 2N-CH 25V 16A/31A ... |
BSC0902NSATMA1 | Infineon Tec... | 0.32 $ | 5000 | MOSFET N-CH 30V 100A 8TDS... |
BSC014NE2LSIATMA1 | Infineon Tec... | 0.43 $ | 1000 | MOSFET N-CH 25V 33A TDSON... |
BSC097N06NSATMA1 | Infineon Tec... | 0.27 $ | 1000 | MOSFET N-CH 60V 46A TDSON... |
BSC010N04LSIATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 37A 8TDSO... |
BSC0911NDATMA1 | Infineon Tec... | 0.58 $ | 1000 | MOSFET 2N-CH 25V 18A/30A ... |
BSC015NE2LS5IATMA1 | Infineon Tec... | 0.48 $ | 1000 | MOSFET N-CH 25V 33A TDSON... |
BSC018NE2LSIATMA1 | Infineon Tec... | 0.42 $ | 1000 | MOSFET N-CH 25V 29A TDSON... |
BSC016N06NSATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 30A TDSON... |
BSC027N04LSGATMA1 | Infineon Tec... | -- | 30000 | MOSFET N-CH 40V 100A TDSO... |
BSC093N04LSGATMA1 | Infineon Tec... | 0.22 $ | 1000 | MOSFET N-CH 40V 49A TDSON... |
BSC0906NSATMA1 | Infineon Tec... | -- | 5000 | MOSFET N-CH 30V 18A 8TDSO... |
BSC050NE2LSATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 39A TDSON... |
BSC035N10NS5ATMA1 | Infineon Tec... | 1.09 $ | 1000 | MOSFET N-CH 100V 100A TDS... |
BSC030N08NS5ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 80V 100A 8TDS... |
BSC026N04LSATMA1 | Infineon Tec... | 0.43 $ | 5000 | MOSFET N-CH 40V 23A 8TDSO... |
BSC065N06LS5ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CHANNEL 60V 64A ... |
BSC020N025S G | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 100A TDSO... |
BSC027N03S G | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 100A TDSO... |
BSC079N03SG | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 40A TDSON... |
BSC067N06LS3GATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 50A TDSON... |
BSC028N06LS3GATMA1 | Infineon Tec... | 0.88 $ | 1000 | MOSFET N-CH 60V 100A TDSO... |
BSC024N025S G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 100A TDSO... |
BSC040N10NS5ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 100A 8TD... |
BSC0502NSIATMA1 | Infineon Tec... | 0.4 $ | 1000 | MOSFET N-CH 30V 26A TDSON... |
BSC077N12NS3GATMA1 | Infineon Tec... | 0.89 $ | 1000 | MOSFET N-CH 120V 98A 8TDS... |
BSC097N06NSTATMA1 | Infineon Tec... | 0.3 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC080N03LSGATMA1 | Infineon Tec... | 0.2 $ | 1000 | MOSFET N-CH 30V 53A TDSON... |
BSC031N06NS3GATMA1 | Infineon Tec... | 0.71 $ | 1000 | MOSFET N-CH 60V 100A TDSO... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
