Allicdata Part #: | BSC060P03NS3EGATMA1TR-ND |
Manufacturer Part#: |
BSC060P03NS3EGATMA1 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 17.7A TDSON-8 |
More Detail: | P-Channel 30V 17.7A (Ta), 100A (Tc) 2.5W (Ta), 83W... |
DataSheet: | BSC060P03NS3EGATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.31799 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 17.7A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 3.1V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 10V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 6020pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8 |
Package / Case: | 8-PowerTDFN |
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BSC060P03NS3EGATMA1 is a silicon-based N-channel enhancement mode MOSFET. It is a single device MOSFET with extremely small form factor that provides superior performance. This single MOSFET is part of a wide variety of MOSFETs from Vishay Intertechnology. It is used not only for switching applications, but also for monitoring temperature, current, and voltage.
Applications
BSC060P03NS3EGATMA1 is commonly used in numerous applications such as motor speed, voltage and current control that require high switching speed, low gate-source and gate-drain capacitance and low power dissipation. Moreover, its small form factor makes it ideal for applications with limited space constraints. It is widely used in low-noise digital circuits, portable devices, battery-powered applications, and power switching circuits. Furthermore, these small MOSFETs can replace several individual transfer and ICs in order to reduce size and cost.
Working Principle
BSC060P03NS3EGATMA1 is a type of MOSFET (metal-oxide-silicon field-effect transistor) that is built on a single silicon wafer. It has an insulated gate terminal that is located between two metal contacts called source and drain. When the gate terminal is left open, no current flows between the source and the drain. When an electric field is applied to the gate terminal, it enables current to flow. The electric field created by the voltage between the gate and the source is called the gate voltage.
The electric field can be used to control the resistance between the source and the drain thereby controlling the amount of current flow. The amount of current flow is proportional to the magnitude of the gate voltage. By controlling the gate voltage, voltage and current control can be performed with high switching speed, low gate-source and gate-drain capacitance and low power dissipation.
Conclusion
BSC060P03NS3EGATMA1 is a single MOSFET that can be used in many applications, including motor speed and voltage control. Its small form factor allows it to be used in applications with limited space. The working principle of the MOSFET is based on controlling the resistance between the source and the drain with a gate voltage. This MOSFET provides superior performance and high switching speed, low gate-source and gate-drain capacitance and low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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