Allicdata Part #: | BSC011N03LSTATMA1TR-ND |
Manufacturer Part#: |
BSC011N03LSTATMA1 |
Price: | $ 0.78 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIFFERENTIATED MOSFETS |
More Detail: | N-Channel 30V 39A (Ta), 100A (Tc) 3W (Ta), 115W (T... |
DataSheet: | BSC011N03LSTATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.70968 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 39A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.1 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6300pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 3W (Ta), 115W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8 FL |
Package / Case: | 8-PowerTDFN |
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The BSC011N03LSTATMA1 is a type of single-gate metal-oxide-semiconductor Field-effect Transistor (MOSFET). These transistors are used to amplify electronic signals in a range of electronic circuits, primarily those related to high-frequency, low-noise applications.
MOSFETs provide a number of advantages over bipolars, including higher transconductance, faster switching speeds, lower gate capacitance, and lower on-state voltage drops. As such, they are often used in power amplifier circuits, where both high current and low noise performance are desired. In addition, their low gate capacitance, which allows for low gate noise and higher operating speeds, makes them especially useful in high-frequency switching circuits, such as in the control of switching power converters, motor drivers, and Class-D amplifiers.
The BSC011N03LSTATMA1 is a vertical N-channel MOSFET. It is designed for use in high-current, high-temperature applications, such as switching power inverters, motor drivers, and broadband amplifiers. It has a maximum drain-source current of 9A and a maximum drain-source voltage of 40V. The chip has an on-resistance of 0.6 mΩ, a capacitance of 6 pF, and an operating temperature range of -55°C to 175°C. It is designed for applications that require low gate leakage current and fast switching operation. The device also features low gate charge and excellent on-state resistance linearity, making it suitable for synchronous rectification.
The BSC011N03LSTATMA1 is built on a 0.011 μm gate length processor and features an innovative layout of the source and gate cells, which ensures long-term reliability and high performance. It also ensures the most efficient layout by increasing the on-state resistance linearity and reducing the gate charge differences between the different cells. The MOSFET also features a removal of the transition region to reduce switching noise, as well as a high-purity epitaxial layer that results in reduced internal power loss during operation.
In conclusion, the BSC011N03LSTATMA1 is a single-gate MOSFET. It is used in high-current, high-temperature applications, such as switching power converters, motor drivers, and Class-D amplifiers. Its low gate capacitance and high-quality source-gate layout make it suitable for synchronous rectification and low-noise applications, while its advanced design features make it suitable for long-term reliability and high performance.
The specific data is subject to PDF, and the above content is for reference
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