BSC070N10NS5ATMA1 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3.8V @ 50µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TDSON-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2700pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	7 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IntroductionThe BSC070N10NS5ATMA1 is a N-channel Enhancement Mode Field Effect Transistor (FET) specifically designed for power switching applications. This particular FET model is designed to ensure good reliability, low on-state resistance, and high thermal performance, making it suitable for a variety of applications, such as motor control, DC/DC converter, portable device and consumer electronics. The internal structure of a FET, its construction and the main working principle are the key elements for understanding their operation and correctly applying them in a wide range of applications.Construction & Internal Structure of BSC070N10NS5ATMA1The BSC070N10NS5ATMA1 is an N-channel Enhancement Mode FET that is constructed with an Insulated-Gate Bipolar Transistor (IGBT) or High-Voltage Insulated-Gate Transistor (HVIGBT). The components forming the transistor are the drain, gate and source which are each placed inside their own 10nm thick silicon layer. The IGBT is responsible for creating electric fields across the junction between the drain and the gate to increase the density of the electrons and holes, thus controlling the current flow through the transistor. Additionally, each FET is equipped with an extra layer of insulation to further reduce the leakage current.Working PrinciplesThe working principle of FETs can be divided into two phases: The Gate-to-Source Voltage (Vgs) phase and the drain-to-source voltage (Vds) phase. The gate-to-source voltage phase involves the application of a control voltage at the gate terminal of the FET. The voltage will induce an electric field which will control the flow of electrons in the FET. This induced electric field will cause an increase in the concentration of holes and electrons near the drain resulting in an increase current flow through the transistor.The drain-to-source voltage phase involves the application of a reverse bias voltage at the drain terminal of the FET, which will further enhance the current flow through the transistor. This phase is responsible for increasing the resistance of the FET, as it decreases the electric field, thus enabling the transistor to operate in a low power mode. As a result, the BSC070N10NS5ATMA1 is able to maintain a low on-state resistance, as well as a high thermal performance, making it suitable for power switching applications.Applications of BSC070N10NS5ATMA1The BSC070N10NS5ATMA1 is widely used for motor control, DC/DC converter, portable device and consumer electronics. This FET is designed to offer excellent reliability and a low on-state resistance, which makes it the perfect choice for these applications. For motor control applications, the BSC070N10NS5ATMA1’s high thermal performance and low on-state resistance allow it to handle higher switching frequencies, thus providing a more efficient motor control. Additionally, the FET’s enhanced reliability ensures that it can operate for long periods of time without any risk of failure.The BSC070N10NS5ATMA1 is also well suited for DC/DC converters. The FET’s combination of low on-state resistance and high thermal performance makes it the perfect choice for these types of applications, as it can easily handle the high currents and voltages that are required in DC/DC converters.The BSC070N10NS5ATMA1 is also widely used in portable devices, such as cell phones, tablets and laptops. This FET is able to maintain a low on-state resistance while being able to handle the high currents that are generally found in these types of devices. Additionally, its enhanced reliability ensures that it is able to operate for long periods of time without any risk of failure.Finally, the BSC070N10NS5ATMA1 is also well suited for consumer electronic applications. This FET is designed to offer a low on-state resistance and high thermal performance, as well as enhanced reliability for many common consumer electronic applications, such as TVs and DVD players.ConclusionIn conclusion, the BSC070N10NS5ATMA1 is an N-channel Enhancement Mode FETs designed for power switching applications and widely used in motor control, DC/DC converters, portable devices and consumer electronics. The internal structure and construction of the BSC070N10NS5ATMA1, as well as its working principles, are essential elements in understanding its operation and correctly apply it in numerous applications. The FET’s combination of low on-state resistance and high thermal performance makes it the ideal choice for these kinds of applications.

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