BSC010N04LSATMA1 Allicdata Electronics

BSC010N04LSATMA1 Discrete Semiconductor Products

Allicdata Part #:

BSC010N04LSATMA1TR-ND

Manufacturer Part#:

BSC010N04LSATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 100A TDSON-8
More Detail: N-Channel 40V 38A (Ta), 100A (Tc) 2.5W (Ta), 139W ...
DataSheet: BSC010N04LSATMA1 datasheetBSC010N04LSATMA1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8 FL
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 1 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BSC010N04LSATMA1 is a commonly used N-channel enhancement type metal–oxide–semiconductor field-effect transistor (MOSFET). This type of MOSFET is a three-terminal device that is composed of a silicon substrate and a metal gate, and it can be used to regulate current in electronic circuits. The BSC010N04LSATMA1 is available in both n-type and p-type variants to accommodate different circuit requirements. This type of MOSFET transistor is commonly used for various applications such as power supply, amplification, switching, and protection circuits.

The working principle of a BSC010N04LSATMA1 is based on the voltage dependence of the current flow between the source and the drain. When no voltage is applied to the gate, the transistor is in its "off" state, and no current flows between the source and the drain. When a voltage is applied to the gate, a depletion layer is formed at the gate region, which increases the resistance between the source and the drain. The amount of current that will flow between the source and the drain is determined by the magnitude of the voltage applied to the gate.

The BSC010N04LSATMA1 can be used in a variety of applications due to its low on-resistance, low threshold voltage, fast switching speed, and high breakdown voltage. This type of MOSFET transistor can be used effectively in power supply units, audio amplifiers, low dropout (LDO) regulators, motor control circuits, and many other circuit types. The BSC010N04LSATMA1 is an ideal choice for applications where a low on-resistance and fast switching speed is required.

The BSC010N04LSATMA1 is typically sold in a TO-220 or surface-mount package, depending on the application. The pins of the package are labeled according to their purpose: source, gate, and drain. The source pin is connected to the source voltage, and the drain pin is connected to the load. The gate pin is connected to the gate voltage, which is used to regulate the current flow between the source and the drain.

The BSC010N04LSATMA1 is an extremely popular MOSFET transistor due to its low on-resistance and high breakdown voltage ratings. Its fast switching speed and low threshold voltage make it a great choice for many applications. Its three-pin package design makes it easy to install and use in a variety of circuits. With its many benefits and versatility, the BSC010N04LSATMA1 is a popular choice for a wide range of electronics projects.

The specific data is subject to PDF, and the above content is for reference

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