
BSC010N04LSATMA1 Discrete Semiconductor Products |
|
Allicdata Part #: | BSC010N04LSATMA1TR-ND |
Manufacturer Part#: |
BSC010N04LSATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 100A TDSON-8 |
More Detail: | N-Channel 40V 38A (Ta), 100A (Tc) 2.5W (Ta), 139W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8 FL |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 139W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 1 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.BSC010N04LSATMA1 is a commonly used N-channel enhancement type metal–oxide–semiconductor field-effect transistor (MOSFET). This type of MOSFET is a three-terminal device that is composed of a silicon substrate and a metal gate, and it can be used to regulate current in electronic circuits. The BSC010N04LSATMA1 is available in both n-type and p-type variants to accommodate different circuit requirements. This type of MOSFET transistor is commonly used for various applications such as power supply, amplification, switching, and protection circuits.
The working principle of a BSC010N04LSATMA1 is based on the voltage dependence of the current flow between the source and the drain. When no voltage is applied to the gate, the transistor is in its "off" state, and no current flows between the source and the drain. When a voltage is applied to the gate, a depletion layer is formed at the gate region, which increases the resistance between the source and the drain. The amount of current that will flow between the source and the drain is determined by the magnitude of the voltage applied to the gate.
The BSC010N04LSATMA1 can be used in a variety of applications due to its low on-resistance, low threshold voltage, fast switching speed, and high breakdown voltage. This type of MOSFET transistor can be used effectively in power supply units, audio amplifiers, low dropout (LDO) regulators, motor control circuits, and many other circuit types. The BSC010N04LSATMA1 is an ideal choice for applications where a low on-resistance and fast switching speed is required.
The BSC010N04LSATMA1 is typically sold in a TO-220 or surface-mount package, depending on the application. The pins of the package are labeled according to their purpose: source, gate, and drain. The source pin is connected to the source voltage, and the drain pin is connected to the load. The gate pin is connected to the gate voltage, which is used to regulate the current flow between the source and the drain.
The BSC010N04LSATMA1 is an extremely popular MOSFET transistor due to its low on-resistance and high breakdown voltage ratings. Its fast switching speed and low threshold voltage make it a great choice for many applications. Its three-pin package design makes it easy to install and use in a variety of circuits. With its many benefits and versatility, the BSC010N04LSATMA1 is a popular choice for a wide range of electronics projects.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BSC019N06NSATMA1 | Infineon Tec... | 0.75 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC039N06NSATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 19A TDSON... |
BSC014N03LSGATMA1 | Infineon Tec... | 0.5 $ | 1000 | MOSFET N-CH 30V 100A TDSO... |
BSC019N04LSATMA1 | Infineon Tec... | 0.55 $ | 1000 | MOSFET N-CH 40V 27A 8TDSO... |
BSC084P03NS3GATMA1 | Infineon Tec... | 0.34 $ | 5000 | MOSFET P-CH 30V 14.9A TDS... |
BSC030N04NSGATMA1 | Infineon Tec... | 0.32 $ | 1000 | MOSFET N-CH 40V 100A TDSO... |
BSC057N03MSGATMA1 | Infineon Tec... | 0.22 $ | 1000 | MOSFET N-CH 30V 71A TDSON... |
BSC022N03S | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 50A TDSON... |
BSC057N08NS3GATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 80V 100A TDSO... |
BSC0500NSIATMA1 | Infineon Tec... | 0.62 $ | 1000 | MOSFET N-CH 30V 35A TDSON... |
BSC0921NDIATMA1 | Infineon Tec... | 0.5 $ | 1000 | MOSFET 2N-CH 30V 17A/31A ... |
BSC0910NDIATMA1 | Infineon Tec... | 0.71 $ | 1000 | MOSFET 2N-CH 25V 16A/31A ... |
BSC0902NSATMA1 | Infineon Tec... | 0.32 $ | 5000 | MOSFET N-CH 30V 100A 8TDS... |
BSC014NE2LSIATMA1 | Infineon Tec... | 0.43 $ | 1000 | MOSFET N-CH 25V 33A TDSON... |
BSC097N06NSATMA1 | Infineon Tec... | 0.27 $ | 1000 | MOSFET N-CH 60V 46A TDSON... |
BSC010N04LSIATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 37A 8TDSO... |
BSC0911NDATMA1 | Infineon Tec... | 0.58 $ | 1000 | MOSFET 2N-CH 25V 18A/30A ... |
BSC015NE2LS5IATMA1 | Infineon Tec... | 0.48 $ | 1000 | MOSFET N-CH 25V 33A TDSON... |
BSC018NE2LSIATMA1 | Infineon Tec... | 0.42 $ | 1000 | MOSFET N-CH 25V 29A TDSON... |
BSC016N06NSATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 30A TDSON... |
BSC027N04LSGATMA1 | Infineon Tec... | -- | 30000 | MOSFET N-CH 40V 100A TDSO... |
BSC093N04LSGATMA1 | Infineon Tec... | 0.22 $ | 1000 | MOSFET N-CH 40V 49A TDSON... |
BSC0906NSATMA1 | Infineon Tec... | -- | 5000 | MOSFET N-CH 30V 18A 8TDSO... |
BSC050NE2LSATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 39A TDSON... |
BSC035N10NS5ATMA1 | Infineon Tec... | 1.09 $ | 1000 | MOSFET N-CH 100V 100A TDS... |
BSC030N08NS5ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 80V 100A 8TDS... |
BSC026N04LSATMA1 | Infineon Tec... | 0.43 $ | 5000 | MOSFET N-CH 40V 23A 8TDSO... |
BSC065N06LS5ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CHANNEL 60V 64A ... |
BSC020N025S G | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 100A TDSO... |
BSC027N03S G | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 100A TDSO... |
BSC079N03SG | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 40A TDSON... |
BSC067N06LS3GATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 50A TDSON... |
BSC028N06LS3GATMA1 | Infineon Tec... | 0.88 $ | 1000 | MOSFET N-CH 60V 100A TDSO... |
BSC024N025S G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 100A TDSO... |
BSC040N10NS5ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 100A 8TD... |
BSC0502NSIATMA1 | Infineon Tec... | 0.4 $ | 1000 | MOSFET N-CH 30V 26A TDSON... |
BSC077N12NS3GATMA1 | Infineon Tec... | 0.89 $ | 1000 | MOSFET N-CH 120V 98A 8TDS... |
BSC097N06NSTATMA1 | Infineon Tec... | 0.3 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC080N03LSGATMA1 | Infineon Tec... | 0.2 $ | 1000 | MOSFET N-CH 30V 53A TDSON... |
BSC031N06NS3GATMA1 | Infineon Tec... | 0.71 $ | 1000 | MOSFET N-CH 60V 100A TDSO... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
