BUK7226-75A,118

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BUK7226-75A,118 is a high voltage field-effect transistor (HFET). It is a type of insulated-gate, field-effect transistor that is used primarily in power switching applications. The transistor is composed of a source, drain and gate (hence the name HFET) and operates much like a conventional metal-oxide-semiconductor field effect transistor (MOSFET). It has several advantages over traditional MOSFETs, including higher breakdown voltage, higher temperature range, and longer operating life.

In comparison to a FET, an HFET also has a lower on-resistance, which is defined as the resistance of the transistor when its gate-source voltage exceeds its threshold voltage. This lower on-resistance allows for greater current handling capability. Furthermore, an HFET is designed to operate at lower voltage levels than other types of transistors, typically those between 8 and 15 volts rather than the 16-40 volts of a FET.

BUK7226-75A,118 is a voltage-driven power MOSFET. The transistor is composed of two heavily doped source and drain regions on either side of a thin layer of MOS semiconductor material, which connects to a gate. The gate electrode is insulated from the MOS semiconductor material, typically silicon dioxide, and is used to control the flow of current between the source and the drain. The source is positively charged and the drain is negatively charged.

When a voltage is applied to the gate, it attracts the electrons and the drain is weakened. A negative voltage applied to the gate causes a depletion in the flow of electrons and the transistor is turned off. When a positive voltage is applied to the gate, the depletion region collapses and current flows from the source to the drain, and the transistor is in a conducting state. This is the on state or "on/off" potential that a FET offers.

The BUK7226-75A,118 offers the advantage of efficiency due to its low on-resistance, low voltage drive capability, and fast operation. Additionally, HFETs are capable of switching faster than traditional FETs. This feature makes them suitable for high-performance applications such as power transmission, motor control, and high-speed switching in embedded systems and digital electronics. The devices are also suitable for high frequency and pulse applications, owing to their fast switching speed.

The BUK7226-75A,118 has been designed for use in general purpose applications. It is often used in systems that require high current handling capability, high switching speed and improved electrical isolation. It is commonly used in automotive, industrial and consumer electronic applications.

In conclusion, the BUK7226-75A,118 is an High Voltage Field Effect Transistor (HFET). It is an insulated-gate, field-effect transistor that is used primarily for power switching applications. The device has several advantages over traditional MOSFETs, including higher breakdown voltage, higher temperature range, and longer operating life. It also offers the advantage of efficiency due to its low on-resistance, low voltage drive capability and fast operation.

The specific data is subject to PDF, and the above content is for reference