Allicdata Part #: | 1727-7252-2-ND |
Manufacturer Part#: |
BUK763R1-60E,118 |
Price: | $ 0.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 120A D2PAK |
More Detail: | N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2... |
DataSheet: | BUK763R1-60E,118 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.82167 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 293W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8920pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 114nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 3.1 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK763R1-60E, 118 is a self-protected N-channel logic level power MOSFET and is designed for high-side load switching in specific automotive applications. The device has been designed with low on-state resistance and is suitable for switching both very high and low currents. It is also suitable for inductive and non-inductive loads. As a standard logic level MOSFET, the BUK763R1-60E, 118 has an extremely low gate resistance and gate voltage drop which allows switching to be very fast, thus improving overall system efficiency. Furthermore, the device is highly integrated, which reduces the number of external components needed and ensures a smaller size overall.
The BUK763R1-60E, 118 falls under the category of single transistors and field-effect transistors (FETs). It utilizes a three-terminal structure to control the current between drain and source, which makes it a perfect choice for low-cost and low-power applications. The source is connected to ground and is usually the reference reference point for the output voltage. The drain is connected to the load, and the gate is the control terminal and is connected to the voltage or control signal from the logic controller.
The BUK763R1-60E, 118 features a maximum drain-to-source voltage rating of 60V, which is enough for driving most low-saturation voltage loads. It can switch high currents with low on-state resistance and fast switching speed. The maximum switching speed of this device is 1.2 kHz at VDS = 20V and ID = 2A. It also features an exceptionally low gate charge which guarantees a fast switching times even in the complete cycle. This device also has built-in logic level protection and can withstand high voltage spikes.
The primary application field of the BUK763R1-60E, 118 is in automotive load-switching operations. It is best suited for load switch applications such as Body Control Modules (BCMs), Seat belt pre-tensioners and airbags, window lift drives and engine coolers. It is also suitable for low-side switching operations such as DC/DC converters, motor control applications and display dimming.
In conclusion, the BUK763R1-60E, 118 is a three-terminal logic level N-channel power MOSFET. It is ideal for low-side and high-side switching operations in automotive applications such as BCMs, airbags and window lifts. The device is highly integrated, has low on-state resistance and low gate resistance and charge, and can handle high-voltage spikes. These characteristics make the BUK763R1-60E, 118 a perfect choice for low-cost and low-power applications.
The specific data is subject to PDF, and the above content is for reference
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