BUK7608-40B,118 Allicdata Electronics
Allicdata Part #:

1727-4702-2-ND

Manufacturer Part#:

BUK7608-40B,118

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 40V 75A D2PAK
More Detail: N-Channel 40V 75A (Tc) 157W (Tc) Surface Mount D2P...
DataSheet: BUK7608-40B,118 datasheetBUK7608-40B,118 Datasheet/PDF
Quantity: 4800
800 +: $ 0.41564
Stock 4800Can Ship Immediately
$ 0.46
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2689pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BUK7608-40B,118 is a part of the high-quality transistors, FETs and MOSFETs. It is a single FET (Field Effect Transistor), meaning it contains two-terminals and one path to control current flow with voltage as the primary control of current. This type of FET is utilized as a switch or amplifier which allows the user to vary total current, as well as the output voltage with very low input voltages.The Field Effect Transistor (FET) is a three-terminal semiconductor device consisting of a source, gate and drain. It acts as an amplifier and switch with gate providing the main control. The source, drain and gate electrodes of an FET determine the input and output characteristics of the FET. The charging of the gate enables current to flow between the source and drain terminals of the FET for a defined range of positive, negative or small amplification. The BUK7608-40B,118 is a general purpose FET with a single type of FET structure.The BUK7608-40B,118 has a variety of applications, ranging from automotive and consumer electronics to computer systems and military & aerospace applications. It can be used as a switch for controlling motors, lights and other electronic devices. The FET is also utilized in power management applications, where it is often used as a power amplifier due to its high switching speeds and low resistance.When it comes to the working principle of the BUK7608-40B,118, it is based on the fact that the current flow is controlled by voltage. When sufficient voltage is applied to the gate terminal of the FET, it causes a depletion layer in the semiconductor material around it. This depletion layer acts as an insulator, preventing current from flowing between the source and drain. When the voltage is reduced, the depletion layer shrinks, allowing current to flow. This is why the BUK7608-40B,118 is considered a low-input voltage FET device.When the FET is used in amplifier applications, current flow between the source and drain is used to vary the output voltage. With the help of the gate control of the input voltage, the amplified output voltage can be adjusted depending on the user\'s requirements. This adjustable current flow is what allows the FET to act as an amplifier.In addition, the BUK7608-40B,118 is also used for biasing purposes, where it is used to set a quiescent current level for the device. This allows the device to remain in a calibrated state without having to be manually adjusted.In summary, the BUK7608-40B,118 is a single type of FET which is often used as a switch or amplifier to control current flow. It is utilized in automotive and consumer electronics, computer systems, military & aerospace applications, and power management applications. The FET is able to amplify an output voltage with very low input voltages and can also be used to set the quiescent current level. Its working principle is based on the fact that when sufficient voltage is applied to the gate terminal, it causes a depletion layer in the semiconductor material around it, which acts as an insulator.

The specific data is subject to PDF, and the above content is for reference

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