BUK762R9-40E,118 Allicdata Electronics
Allicdata Part #:

1727-7251-2-ND

Manufacturer Part#:

BUK762R9-40E,118

Price: $ 0.63
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 40V 100A D2PAK
More Detail: N-Channel 40V 100A (Tc) 234W (Tc) Surface Mount D2...
DataSheet: BUK762R9-40E,118 datasheetBUK762R9-40E,118 Datasheet/PDF
Quantity: 2400
800 +: $ 0.57236
Stock 2400Can Ship Immediately
$ 0.63
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 234W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BUK762R9-40E, 118 is a single field effect transistor (FET), also known as an insulated-gate bipolar transistor (IGBT). It is a type of semiconductor device which uses both a bipolar transistor (BJT) and a field effect transistor (FET). In BUK762R9-40E, 118, the function of the FET is to control the flow of current and the function of the BJT is to provide electrical isolation. This device is most often utilized in power electronics applications, such as "motor control and switching, solar inverters, welding, power supplies, UPS systems, lighting, and HVAC systems." This is because "it can switch large load currents at high voltage with minimal losses, high power integration, low conduction losses and reduced system complexity." Additionally, the device can handle "hundreds of volts peak values, low gate drive power consumption, and typically low gate threshold voltage."

The working principle of a BUK762R9-40E,118 essentially involves the use of an insulated gate. The FET relies on the effect of an electric field on the conductivity of a semiconductor material, while the BJT utilises the conduction between two points of the semiconductor material. This is known as the "field effect" which is triggered by the electric field.

The construction of BUK762R9-40E,118 can be divided into three parts: the source, gate, and drain. The source is connected to one terminal of the device, the gate is connected to the other terminal, and the drain is an integrated component. When an electrical current is applied to the gate, it creates an electric field which affects the conductivity of the semiconductor material. As the electric field affects the conduction of electrons between the source and drain, a voltage drop is observed between the two points. The amount of potential difference will determine the level of current flow through the device.

In addition to the electric field component, BUK762R9-40E,118 also utilises a control element to regulate the current flow. This control element is known as the "gate capacitance." This component adds more functionality to the device by allowing it to modulate the current flow. For instance, the device can detect a sudden spike in current and will act as a safety measure by reducing the current flow through the device. This is an important safety feature for applications such as HVAC systems.

BUK762R9-40E,118 is a versatile device that can be used in a variety of applications. Its FET and BJT components give it an advantage over other power electronic devices by allowing it to switch large currents at high voltages with minimal losses. Its combination of excellent electrical isolation, low gate drive power consumption, and typically low gate threshold voltage makes it well suited for motor control, solar inverters, welding, and other power supplies. As a result, it is an important component in many power electronics systems.

The specific data is subject to PDF, and the above content is for reference

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