| Allicdata Part #: | 1727-7248-ND |
| Manufacturer Part#: |
BUK7E8R3-40E,127 |
| Price: | $ 0.97 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 40V 75A I2PAK |
| More Detail: | N-Channel 40V 75A (Tc) 96W (Tc) Through Hole I2PAK |
| DataSheet: | BUK7E8R3-40E,127 Datasheet/PDF |
| Quantity: | 4940 |
| 1 +: | $ 0.87570 |
| 50 +: | $ 0.70245 |
| 100 +: | $ 0.61469 |
| 500 +: | $ 0.47670 |
| 1000 +: | $ 0.37634 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 96W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1730pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
| Series: | Automotive, AEC-Q101, TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 7.4 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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BUK7E8R3-40E,127 is a type of transistor, which belongs to the family of FETs, MOSFETs and single transistors. Transistors are semiconductor devices which plays an integral part in the electronics world. It is one of the most important components used in almost all digital systems. Transistors act as the main switch and amplifier for many circuits.
BUK7E8R3-40E,127, specifically belongs to the field-effect transistors (FETs), which are commonly used in integrated circuits. They rely on the presence of an external electric field to turn the flow of current on or off within the circuit. FETs can be further sub divided into field-effect MOSFETs and single transistors. The working principle of BUK7E8R3-40E,127 is based on the movement of electrons between two conductive surfaces to allow the flow of current, which then creates an amplifier effect.
BUK7E8R3-40E,127 is mainly used in digital electronics, such as computers and microwaves, as their switching speed is extremely fast when compared to regular transistors. It is also commonly used to amplify signal and provide protection from voltage fluctuations. They are also present in many electronic devices and components, such as radio transmitters and receivers, digital clocks, and calculators.
The main components of BUK7E8R3-40E,127 are the gate, drain, and source. The gate is a control terminal for the current which is the input signal of the MOSFET. The drain is the output of the FET and it allows the flow of current from the source to the drain, and vice versa. The source is the input of the FET and carries the input signal to the drain, where it is then amplified.
When the external voltage on the gate is increased, this causes an increase in the electrical field within the FET, which draws a large number of electrons to the channel between the source and drain. This causes a decrease in resistance between the source and drain, which in turn allows a current to flow. This phenomenon is known as electron-hole injection. As the current flows between the source and drain, it is amplified by the FET.
BUK7E8R3-40E,127 is an important transistor for use in digital devices and circuits, as it provides a great solution for handling voltage fluctuations, as well as for providing a high switching speed. By using this transistor, individuals are also able to configure many circuits in an efficient way. It can also be used to amplify signals or to control current or voltage signals.
The specific data is subject to PDF, and the above content is for reference
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BUK7E8R3-40E,127 Datasheet/PDF