BUK78150-55A/CUX

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	8W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	230pF @ 25V
Vgs (Max):	±20V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	150 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5.5A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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BUK78150-55A/CUX Application Field and Working PrincipleThe BUK78150-55A/CUX is a N-Channel Enhancement Mode Field-Effect Transistor (NFET) manufactured by Infineon Technologies. It has a very low on-state resistance (RDS(on)) at 2.5 mΩ and is also capable of handling high powers of up to 30 W at 23A. This makes it a preferred choice for several power management applications. In this article, let us take a closer look at the working principle and applications of the BUK78150-55A/CUX NFET.The BUK78150-55A/CUX is an enhancement-mode NFET which means that it is normally off and the gate needs to be triggered by a voltage to conduct current. Once triggered, the current conduction is between the source and the drain.The N-channel MOSFET works when the gate voltage is less than the source voltage, allowing current to flow from the drain to the source. This voltage difference across the channel is known as the drive voltage and is the key to how this MOSFET operates. When this drive voltage is increased above a certain level, it causes an increase in the drain current known as the saturation voltage. Once this voltage is reached, the drain current will remain constant until the gate voltage is reduced below the saturation voltage.The BUK78150-55A/CUX is ideal for use in applications such as low voltage switching, switching power supply voltage regulators, low-noise power amplifiers, and gate drivers. It also can be used in battery management systems and motor control.The BUK78150-55A/CUX NFET has an RDSON (on-state resistance) of just 2.5 mΩ and can handle up to 30 watts at 23 A. This makes it a preferred choice for power management applications. This power FET is also capable of withstanding a drain-source voltage of 25 V, making it suitable for low-voltage applications. Additionally, the BUK78150-55A/CUX has a high avalanche sonic speed of 5.5 GHz and a current rating of 55 A at 175° C.Since the BUK78150-55A/CUX is an N-channel MOSFET, it can be used as a switch or an amplifier. It can be used as a switch to control higher currents. In this application, the BUK78150-55A/CUX can be used to control the power output of a power supply, the resistance of a driver circuit or as part of a logic-level power switch. As an amplifier, the BUK78150-55A/CUX can be used to drive motors or control the current source in relation to an input signal. This makes it an ideal choice for applications such as audio systems or radio frequency amplifiers.The BUK78150-55A/CUX has a very low rds(on) value of 2.5 mΩ which makes it particularly suitable for applications that require low power dissipation. This high-performance FET has a high current rating of 55 A at 175°C and a high switching frequency of 5.5 GHz. Additionally, it can handle drain-source voltages up to 25 V and can withstand high-power peaks up to 30 W.In conclusion, the BUK78150-55A/CUX is a high-performance N-Channel Enhancement Mode Field-Effect Transistor (NFET) manufactured by Infineon Technologies. This NFET is ideal for low-voltage switching applications, switching power supply voltage regulators, low-noise power amplifiers, gate drivers, battery management systems and motor control. It has an RDSON of just 2.5 mΩ and can handle up to 30 watts at 23 A. Additionally, it has a high avalanche sonic speed of 5.5 GHz and a current rating of 55 A at 175° C. All of these features make the BUK78150-55A/CUX an ideal choice for a variety of applications.

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