
Allicdata Part #: | 1727-7246-ND |
Manufacturer Part#: |
BUK7E4R6-60E,127 |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 100A I2PAK |
More Detail: | N-Channel 60V 100A (Tc) 234W (Tc) Through Hole I2P... |
DataSheet: | ![]() |
Quantity: | 3075 |
1 +: | $ 1.13400 |
50 +: | $ 0.90758 |
100 +: | $ 0.79412 |
500 +: | $ 0.61586 |
1000 +: | $ 0.48622 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 234W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6230pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 82nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK7E4R6-60E,127 is a type of transistor known as a Metal-Oxide Semiconductor Field Effect Transistor (MOSFET). It is a single MOSFET, meaning it contains a single gate, source, and drain. This type of transistor is used extensively in modern technology and is commonly used in signal processing, power switching, and amplification control.
A MOSFET is a three-terminal device consisting of three parts: a source, a gate, and a drain. They are typically composed of a silicon crystal lattice surrounded by a gate oxide layer and a gate electrode. The gate electrode is typically made up of a metal, a polysilicon, or a doped semiconductor. Each of the three terminals can be used for either positive or negative voltages. The source and drain each provide power to different parts of the MOSFET, and the gate controls the current flow through it.
The BUK7E4R6-60E,127 is primarily used for power switching applications. In these applications, it acts as a switch that can open and close a circuit. When a higher voltage is applied to the gate, the switch will close and allow current to flow through the circuit. Conversely, when a lower voltage is applied, the switch will open and block the current.
The BUK7E4R6-60E,127 also has applications in amplification control because it can be used to amplify signals. When a lower voltage is applied to the gate, the transistor will act as an amplifier. By controlling the current flow, it can be used to boost or attenuate signals.
The BUK7E4R6-60E,127 is designed to be low power, and its power rating is between 50 and 150 Watts. Its maximum drain-source voltage is 30 Volts and has a maximum drain current of 6.2 Amps. It can operate over a wide temperature range, between -55 and +175 degrees Celsius. The BUK7E4R6-60E,127 is a highly reliable and efficient device, and it is widely used in the electronics industry.
Overall, the BUK7E4R6-60E,127 is a versatile and reliable power switching and amplification control device. It has a wide operating temperature range, high power efficiency, and can be used to switch and control the current flow through circuits. The BUK7E4R6-60E,127 is a highly useful device and is commonly used in many electronics applications.
The specific data is subject to PDF, and the above content is for reference
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