BUK768R3-60E,118

BUK768R3-60E,118 application field and working principleThe BUK768R3-60E is an enhancement-mode vertical MOSFET with an integrated ESD protection. These devices are fabricated using advanced planar technology and offer excellent low-on resistance and fast switching characteristics. These MOSFETs are best suited for load switched and level-shifting applications.The BUK768R3-60E is a typically used MOSFET that is used for a wide range of applications such as, DC/DC conversion, PWM regulation, DC/AC switching, load drive and low-voltage protection. This specific MOSFET can handle an absolute maximum voltage of 60V and a maximum power dissipation of 20W. Its on-state resistance is 11mΩ.The working principle of the BUK768R3-60E is quite simple and basic. The source of the MOSFET is connected to the ground, while the drain is connected to the load. The gate terminal is then connected to the power supply, controlling the uptake of current by the MOSFET. When the gate voltage is high, the MOSFET is “ON” and can conduct current. On the other hand, when the gate voltage is low, the MOSFET is in its “OFF” state and there is no current conduction. In order for the MOSFET to function properly, it is necessary to provide the gate-source voltage. This voltage is responsible for controlling the conduction of current; this is achieved by controlling the amount of charge in the gate-source. If the amount of charge is high, then the MOSFET will conduct, and if the charge is low, then the MOSFET will not conduct.The BUK768R3-60E exhibits excellent switching characteristics, with an extremely low on-state resistance and fast switching performance. However, it is important to note that the input capacitance of this MOSFET is relatively high (180pF), which is necessary to provide the necessary gate-source voltage. This higher input capacitance also contributes to slower switching performance and reduced power efficiency.Overall, the BUK768R3-60E is an excellent device for a wide range of applications where low-on resistance and fast switching are desired. This MOSFET is well suited for DC/DC conversion, PWM regulation, load drive, low-voltage protection, and other applications.