
Allicdata Part #: | 1727-7244-ND |
Manufacturer Part#: |
BUK7E3R1-40E,127 |
Price: | $ 1.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 100A I2PAK |
More Detail: | N-Channel 40V 100A (Tc) 234W (Tc) Through Hole I2P... |
DataSheet: | ![]() |
Quantity: | 221 |
1 +: | $ 1.37970 |
50 +: | $ 1.11119 |
100 +: | $ 1.00006 |
500 +: | $ 0.77783 |
1000 +: | $ 0.64450 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 234W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 79nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 3.1 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FET stands for Field-Effect Transistor, and this kind of transistor is a member of the larger and more complex transistor family. Generally, FETs have three terminals. The source and the drain are both connected to an electric source and the Gate is connected to a control source, such as a signal or current, that is used to determine the conductivity of the device. FETs are particularly useful in applications where it is desirable to control the current flow between the source and the drain without requiring a large amount of current to do so. This makes them ideal for applications such as amplifiers and radio-frequency (RF) signal processing, where a small current can be used to control a relatively high current.
The BUK7E3R1-40E,127 is a single FET from the comprehensive and highly advanced BUK family of FETs from Infineon Technologies. It comes in a quarter-standard small-outline of 2 mm x 2 mm and requires an operating voltage of only -3 V, making it suitable for portable applications. Its maximum drain current is 4A and its maximum drain-source resistance is 45 mOhm, while its maximum gate-source voltage is 12 V. All these features make it one of the most sophisticated FETs available today, making it ideal for highly critical applications.
The primary application field of the BUK7E3R1-40E,127 is to enable power management in a wide range of electronic systems. In fact, it finds extensive use in a variety of power management and distribution systems. It is typically used in applications where a low current must be used to control a much higher current. Examples of this include motor control, power half-bridge circuits, switching regulators, DC/DC converters, and so forth. It is also an ideal choice for amplifiers, RF signal processing, and high-end digital signal processing applications.
The working principle of the BUK7E3R1-40E,127 is relatively simple. When a positive voltage is applied to the gate, a channel of electrons is created in the semiconductor material between the source and the drain. This creates a low-resistance path between the source and the drain, allowing current to flow through it. When the gate voltage is removed, the current flow is interrupted. This action is what is used to control the current flow in the device.
In conclusion, the BUK7E3R1-40E,127 is an advanced FET that can be used to enable power management in a wide variety of applications, including motor control, switching circuits, switching regulators, and RF signal processing. Its simple working principle makes it ideal for these kinds of applications, and its small size makes it suitable for use in portable devices. All these qualities make it an ideal choice for any application where accurate and reliable current control is needed.
The specific data is subject to PDF, and the above content is for reference
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