BUK762R6-40E,118 Allicdata Electronics

BUK762R6-40E,118 Discrete Semiconductor Products

Allicdata Part #:

1727-1065-2-ND

Manufacturer Part#:

BUK762R6-40E,118

Price: $ 0.82
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 40V 100A D2PAK
More Detail: N-Channel 40V 100A (Tc) 263W (Tc) Surface Mount D2...
DataSheet: BUK762R6-40E,118 datasheetBUK762R6-40E,118 Datasheet/PDF
Quantity: 1000
800 +: $ 0.74635
Stock 1000Can Ship Immediately
$ 0.82
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 263W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7130pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BUK762R6-40E,118 is a single, N-channel, HEXFET Power MOSFET with ESD protection. This device is from Infineon Technologies and is intended for power switching applications. The BUK762R6-40E,118 is offered in a surface mount dual in line package, making it suitable for applications where space is a premium. It is also specified to operate temperature ranges between -40°C and 150°C.

The BUK762R6-40F, 118 is designed for use in switching power supplies, lighting, solar inverters, UPS/power conditioning systems, home appliances, automotive lighting and sound, industrial motor drives, gate drivers, and any other applications where a high power MOSFET is required. This device is also suitable for use in many different types of circuits, including voltage feedback and current sensing circuits, pulse-width modulation circuits, and other analog and digital circuits.

The BUK762R6-40E,118 is a N-channel MOSFET, meaning it has an electron channel between the source and the drain. The MOSFET works by having a voltage applied to the gate, causing a field to form in the channel between the source and the drain, allowing current to flow through. The voltage applied to the gate determines how much current is allowed to flow, allowing the device to act as a variable resistor, or variable voltage regulator. The on-resistance characterisitics are very good, allowing this device to be used in situations where efficiency is a priority.

The BUK762R6-40E,118 has an integrated ESD protection network which is designed to alleviate the effects of electrostatic discharge. This is especially important in systems where the user may be exposed to high powered discharge events. The device is also capable of withstanding high temperatures and has good thermal resistance, thus making it suitable for use in many high-power applications.

The BUK762R6-40E,118 is an excellent choice for use in high-voltage and/or high-current applications, as it offers superior performance characteristics, low on-resistance, and integrated electrostatic discharge protection. Its small size and surface mount configuration also make it suitable for applications where space is a premium. This device is a reliable and efficient choice for many power switching applications.

The specific data is subject to PDF, and the above content is for reference

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