BUK7907-55AIE,127

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BUK7907-55AIE,127 Field-Effect Transistor (FET) has many uses and is one of the most popular FET transistors available. It is a single, N-Channel, high-voltage MOSFET with a maximum drain source voltage of 800V and a high-density cell design. This high-quality transistor can be used in many different applications, including audio and video amplification, motor control, power switching and high-frequency signal processing.

The BUK7907-55AIE,127 is an asymmetric, monolithic, N-channel MOSFET transistor, with a terminal of the drain, source and gate. It has a very low on-resistance (Rds) of 7.3 mΩ at Vds = 500V and low gate charge for fast-switching applications. It also has a low gate-source capacitance, a low avalanche energy and a high drain-source current as well as a low reverse transfer capacitance. The BUK7907-55AIE,127 is an ideal choice for audio, video, audio-video and other high-frequency signal processing applications.

The working principle behind the BUK7907-55AIE,127 is simple. The FET is a three-terminal semiconductor device that is composed of two p-type regions, one n-type region, and a drain, source and gate terminal. The source is connected to the n-type region while the drain is connected to the p-type region. The gate is also connected to the p-type region, but separated from the source by a thin insulator layer. When a voltage is applied on the gate, it forms an electric field that induces a blocking or conducting state in the transistor. When the voltage is turned off, the transistor returns to its original state.

The applications for the BUK7907-55AIE,127 can vary depending on its features. The low on-resistance, low gate charge, and high drain-source current make it ideal for audio and video signal amplifier designs. The low reverse transfer capacitance also allows for precise control over the gain of the amplifier. The high current rating and fast switching speed of the BUK7907-55AIE,127 also make it suitable for applications such as motor control and power switching.

The BUK7907-55AIE,127 is a crucial component for many designs due to its many advantages. It is a single, N-channel, high-voltage MOSFET with a high-density cell design and its low reverse transfer capacitance allows for precise control over the gain of amplifiers. It also has a low gate charge, a low avalanche energy, a high drain-source current, and a very low on-resistance at Vds = 500V. The BUK7907-55AIE,127 is an ideal choice for audio, video, audio-video, motor control, power switching and other high-frequency signal processing applications.

The specific data is subject to PDF, and the above content is for reference