BUK7K6R2-40EX

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BUK7K6R2-40EX is an N-channel single TrenchGate field-effect transistor (FET) from the BUK family, specifically from the BUK7K6R series. This series offers improved switching performance and lower on-resistance. This FET is especially suited for applications where high power efficiency and low power dissipation are essential, such as LCD TV displays, switching power supplies, and motor control systems.

This FET features an integral source-drain diode and has a maximum voltage rating of 40 volts, peak current of 3.2A, on-resistance of 1.3 ohms, drain gate charge of 7.0nC, and a drain-source on-state resistance of 8.0mΩ. All these specifications make it an ideal choice for switchmode power supplies and beyond.

It consists of an N-channel depletion region MOSFET with eight cells, connected in parallel and an integrated diode. Each N-channel FET has a single TrenchGate that serves both as the gate terminal and the conductor of the integrated diode. The integrated diode has a peak-reverse voltage of 40V, making it well-suited for switching applications.

BUK7K6R2-40EX\'s working is based on the MOSFET\'s (Metal-Oxide-Semiconductor FET) transistor characteristic. When a voltage is applied to the gate terminal, the electric field induces a channel between the source and the drain in the semiconductor material. The voltage applied to the gate decreases the current from the source to the drain, resulting in an insulated channel in the semiconductor material. By adjusting the gate voltage, the current from the source to the drain can be controlled.

The BUK7K6R2-40EX is a low-cost, excellent choice for high-power, high-efficiency applications where low-power dissipation is necessary. As it can operate at high frequencies, it is well-suited for switching power supplies, motor control systems, and LCD TV displays. Due to its integrated diode, its switching times are significantly reduced, making it a very attractive option for applications where fast switching is required.

In summary, the BUK7K6R2-40EX is a single N-channel trenchgate field-effect transistor (FET) with an integrated diode in a matrix of eight cells, which offers an excellent performance for switching power supplies, motor control systems, and LCD TV displays. Its low on-resistance, high frequency performance, and integrated diode make it an ideal choice for applications where power efficiency and low power dissipation must be taken into account.

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