Allicdata Part #: | BUK7105-40ATE,118-ND |
Manufacturer Part#: |
BUK7105-40ATE,118 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 75A D2PAK |
More Detail: | N-Channel 40V 75A (Tc) 272W (Tc) Surface Mount SOT... |
DataSheet: | BUK7105-40ATE,118 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
Supplier Device Package: | SOT-426 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 272W (Tc) |
FET Feature: | Temperature Sensing Diode |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 118nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BUK7105-40ATE,118 application field and working principle
Introduction:BUK7105-40ATE,118 is a MOSFET transistors which can used in various applications. It is integrated with ultra-low on-resistance and a wide operating range. It has an exceptionally low gate charge over a wide temperature range and therefore increases its versatility in a broad range of applications.
Application Field:
BUK7105-40ATE,118`s versatile nature has made it a good choice for various different applications. It is commonly used in:
- High current DC to DC converters
- High current switch-mode power supplies
- High efficiency synchronous rectification
- Voltage regulators
- Power amplifiers
- Transient suppression devices
- AC switching
The MOSFET transistors can also be used in various consumer electronics and automotive applications, including:
- Automotive lighting systems
- Lighting control and dimming
- Security and instrumentation systems
- Consumer electronics, such as computers and peripherals
- DC power supplies and AC-DC inverters
Working Principle:
BUK7105-40ATE,118 MOSFET transistors use a gate structure which is similar to that of a junction field effect transistor (JFET). The gate voltage modulates the channel current between the drain and the source. When the gate voltage is increased, more electrons are injected into the channel and the channel current is increased. When the gate voltage is decreased, fewer electrons are injected into the channel and the channel current is decreased. An advantage of this type of transistor is that the gate current can be very small, since the voltage across the gate is relatively small. The MOSFET also has superior temperature stability, which means that it can handle high temperatures without degrading its performance.
The MOSFET transistors are also very power-efficient. They are able to handle large currents with a low ‘on’ resistance and this keeps the power dissipation low. The transistors are also able to handle high loads with a high amount of efficiency due to their low input capacitance and a very fast ‘turn-on’ time.
Conclusion:
BUK7105-40ATE,118 is a versatile MOSFET transistor which has a wide range of applications in various fields, ranging from automotive to consumer electronics. It has an exceptionally low gate charge over a wide temperature range and can handle high currents with a low ‘on’ resistance and a high efficiency. It is therefore a good choice for various applications and can be used in a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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