BUK7M45-40EX Allicdata Electronics

BUK7M45-40EX Discrete Semiconductor Products

Allicdata Part #:

1727-2563-2-ND

Manufacturer Part#:

BUK7M45-40EX

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 40V MLFPAK
More Detail: N-Channel 40V 19A (Tc) 31W (Tc) Surface Mount LFPA...
DataSheet: BUK7M45-40EX datasheetBUK7M45-40EX Datasheet/PDF
Quantity: 1000
1500 +: $ 0.12317
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: SOT-1210, 8-LFPAK33
Supplier Device Package: LFPAK33
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 31W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 317pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BUK7M45-40EX is a type of single field effect transistor (FET) known as a Metal Oxide Semiconductor FET (MOSFET). It is a versatile switching element with a low level of power dissipation, suitable for high density, high frequency, and high voltage applications. It is a three-terminal device with one gate, one source, and one drain.

A MOSFET works by utilizing the output of the gate terminal to control the amount of current flowing through the source and drain terminals. When a positive voltage is applied to the gate terminal, it creates a conductive channel between the source-drain terminals. This conductive channel, known as an inversion layer, allows current to flow freely through the device. Conversely, when the voltage applied to the gate terminal is negative, the device is cut-off.

The BUK7M45-40EX is most commonly used in applications such as analog circuits, digital logic circuits, power switching and control, and signal conditioning. It is highly efficient in applications that require a low level of power dissipation, such as in high density, high frequency, and high voltage circuits. It is also popularly used in speech and audio circuits, RF pre-amplifiers and power amplifiers, switching power supplies, motor control, and automotive applications.

In terms of usage, the BUK7M45-40EX is a suitable choice for all types of power switching applications that require a low level of thermal management. It is highly efficient due to its low on-resistance and gate charge, affording better power dissipation with less heat generation. Its traditionally low RDS (ON) value is an added advantage, along with its integrated EMI filters, and its low noise operation makes it ideal for applications such as audio circuits and automotive applications.

The advantages of the BUK7M45-40EX include a high level of speed and symmetry, allowing for minimal switching times. This makes it well suited to high frequency applications such as RF pre-amplifiers and power amplifiers or switching power supplies, thanks to its fast switching time and minimal level of power dissipation. Additionally, its low RDS(ON), integrated EMI filters, and low noise operation also make it suitable for use in digital and analog circuits, motor control, and automotive applications.

Overall, the BUK7M45-40EX is a robust, highly efficient single FET suitable for a wide range of applications, including high density and high frequency circuits, power switching, signal conditioning, and motor control. Its low level of power dissipation, fast switching time, low RDS(ON) value, and low noise operation make it an excellent choice for any application requiring a high degree of accuracy and stability.

The specific data is subject to PDF, and the above content is for reference

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