BUK7675-55A,118 Allicdata Electronics

BUK7675-55A,118 Discrete Semiconductor Products

Allicdata Part #:

1727-7174-2-ND

Manufacturer Part#:

BUK7675-55A,118

Price: $ 0.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 55V 20.3A D2PAK
More Detail: N-Channel 55V 20.3A (Tc) 62W (Tc) Surface Mount D2...
DataSheet: BUK7675-55A,118 datasheetBUK7675-55A,118 Datasheet/PDF
Quantity: 800
800 +: $ 0.27893
Stock 800Can Ship Immediately
$ 0.3
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 483pF @ 25V
Vgs (Max): ±20V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BUK7675-55A,118 application field and working principle

The BUK7675-55A,118 is a type of field effect transistor (FET) that uses the properties of semiconductor materials to amplify signals or switch electrical power. It is a type of semiconductor device which can be used to allow current to flow between two terminals while blocking current in the opposite direction. This type of transistor is used in many electronic applications such as amplifiers, sensors, and digital systems. This type of transistor is usually used as an amplifier or switch as it can modulate current or make it easier to control.

The BUK7675-55A,118 is classified as a single FET because it has only one gate, or contact, that controls the flow of electrons. It is a type of FET which falls under the MOSFET (metal-oxide-semiconductor-field-effect-transistor) category. It is used to amplify or switch digital signals. This type of transistor is made from two different types of materials; namely, a gate oxide and a substrate material. These two materials are used to make a sandwich in which the electrical current is controlled in order to control the switching. The BUK7675-55A,118 is a FET that is particularly useful in switching high frequency analog signals since it is able to handle high frequency signals better than other types of transistors.

The working principle of the BUK7675-55A,118 is quite simple. When a positive voltage is applied to the gate of the FET, electrons will flow through the gate oxide. This creates a conductive channel between the source and the drain and current flow is enabled. If the voltage applied to the gate of the FET is reduced, the electrons will be pushed toward the drain, where they will be absorbed by the substrate material, thus blocking current flow and disabling the switch.

The BUK7675-55A,118 is commonly used in many applications such as digital systems, analog signal amplification and power switching. It is also used in applications such as radiofrequency (RF) switching for switching radio-waves between different frequencies and amplifying signals in consumer electronics and computers. This type of FET is also useful for switching power, particularly in RF amplifiers and instrumentation where transistors must be switched quickly and accurately.

The BUK7675-55A,118 is an efficient and reliable transistor as it is made from high-quality materials and its design enables it to handle high frequency signals well. As with all transistors, this particular type should be handled carefully as it can be easily damaged through electrical shock or mechanical shock.

Overall, the BUK7675-55A,118 is a powerful and versatile transistor that can be used in a variety of applications, from analog signal amplification to RF switching and power switching. With its high-quality materials and design, it is an efficient and reliable transistor for its intended purposes.

The specific data is subject to PDF, and the above content is for reference

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