BUK7Y19-100EX Allicdata Electronics
Allicdata Part #:

1727-1853-2-ND

Manufacturer Part#:

BUK7Y19-100EX

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V LFPAK
More Detail: N-Channel 100V 169W (Tc) Surface Mount LFPAK56, P...
DataSheet: BUK7Y19-100EX datasheetBUK7Y19-100EX Datasheet/PDF
Quantity: 1000
1500 +: $ 0.32081
Stock 1000Can Ship Immediately
$ 0.35
Specifications
Rds On (Max) @ Id, Vgs: --
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 169W (Tc)
FET Feature: --
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: --
Series: --
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BUK7Y19-100EX is a MOSFET (metal-oxide-semiconductor field-effect transistor) transistor, which belongs to the Single FETs (field-effect transistors) category, and have specific application fields and working principles.

The application fields of BUK7Y19-100EX refers to its ability to switch different electrical loads in a safe, efficient and reliable manner. This type of transistors can be used mainly in AC/DC (alternating current/direct current) switching, such as solid-state relays, DC/DC converters, pulse width modulators for high power applications, etc. Moreover, due to its high switching speed, it can be used in high frequency switching applications such as radio frequency amplifiers and transmitters. It can also be used in audio amplifiers and amplifiers for video applications. This type of transistor is suitable for many industrial applications.

Working principle of BUK7Y19-100EX can be highlighted by its two unique features: the fast switching speed and the low on-state resistance. Fast switching speed refers to how quickly the transistor can change from one state to another, usually measured in nanoseconds. Low on-state resistance means that when the transistor is in the “on” state, there is less resistance to current flow. These two features make it possible for the transistor to switch at very high speeds while also consuming less power.

In order to understand how this type of transistor works, the following should be taken into consideration. First, the two metal electrodes (gate and source) are used to control the current flow. When a positive voltage is applied to the gate terminal, the current is allowed to flow through the transistor. When a negative voltage is applied to the gate terminal, the current is blocked. Second, the drain terminal is used to collect the current that has passed through the transistor. Finally, the body terminal is used to control the voltage between the source and drain terminals. When the voltage between the source and drain terminals is greater than the threshold voltage, the transistor is in the “on” state, and when the voltage is lower than the threshold voltage, the transistor is in the “off” state.

In conclusion, BUK7Y19-100EX is a single FET (field-effect transistor) that has specialized application fields and a unique set of features. It is an ideal choice for high-speed switching applications as well as for applications requiring a low on-state resistance. It is also suitable for many industrial applications.

The specific data is subject to PDF, and the above content is for reference

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