BUK7Y113-100EX Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1105-2-ND |
Manufacturer Part#: |
BUK7Y113-100EX |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 12A LFPAK |
More Detail: | N-Channel 100V 12A (Tc) 45W (Tc) Surface Mount LFP... |
DataSheet: | BUK7Y113-100EX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.16332 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 601pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10.4nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 113 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK7Y113-100EX is a FET device designed for applications requiring high performance, long battery life and low power consumption. It is a low-voltage MOSFET designed for use in a wide range of applications, from simple to complex. This device offers a large on/off ratio, excellent linearity and a very low noise level.
The main application field of the BUK7Y113-100EX is the low voltage switch mode power supply (SMPS). This device is ideal for cost-sensitive applications and can be used in highly complex power electronics. It is especially suitable for designs that have high switching frequency, low losses and good output voltage with fast converter response time.
The working principle of the BUK7Y113-100EX is simple to understand. It is based on a MOSFET operating in depletion mode. When the gate voltage is lower than the threshold voltage, the MOSFET is off and no current flows. When the gate voltage is higher than the threshold voltage, the device is turned on and current will flow through the drain to the source.
In order to achieve maximum power efficiency, the FET device must operate at its optimal drain-to-source resistance. The optimal resistance is determined by the threshold voltage of the device. To achieve this, the FET device is usually operated with a constant current or a voltage control circuit. A constant current control circuit allows the device to maintain its optimal operating conditions over a wide range of loads. This is especially useful for applications that require very high efficiency, like in LED drivers.
The power rating of the BUK7Y113-100EX is 27W (at 25°C ambient temperature) and its maximum drain-to-source voltage is 100V. The device features a low on-resistance to ensure low power loss and low conduction losses. It also has a low gate capacitance and a fast switching speed. The device is qualified to handle temperatures up to 175°C and is targeted to work over 10 million cycles.
The BUK7Y113-100EX is a highly advanced FET device that is suitable for many power management and energy efficiency applications. When used with a suitable gate driver, its switching speed and efficiency can be further optimized. Because it operates at low voltage, the device is well suited for battery powered applications that require low power consumption. The high reliability of this device is based on its low 40kHz gate ringing and secure gate drive. It can contribute to reduced design time and cost savings.
The specific data is subject to PDF, and the above content is for reference
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