Allicdata Part #: | 1727-7237-ND |
Manufacturer Part#: |
BUK753R8-80E,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 80V 120A TO220AB |
More Detail: | N-Channel 80V 120A (Tc) 349W (Tc) Through Hole TO-... |
DataSheet: | BUK753R8-80E,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 169nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 12030pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 349W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK753R8-80E,127 is a single-type MOSFET belonging to the group of transistors, FETs and MOSFETs. This particular transistor has an excellent thermal resistance capability, enabling them to handle more energy while keeping their temperatures down, making them ideal for applications where the power needs to be managed efficiently, with the ability to handle large current and voltage.The BUK753R8-80E,127 is a single-gate low-power MOSFET, made using E-Mode technology. This technology produces transistors with high frequency capabilities, allowing them to handle high frequency, high-amplitude signals without compromising their capabilities. This makes them suitable for use in RF- and microwave-related applications, allowing them to be used in applications from VHF to X-band without any problems.Furthermore, the BUK753R8-80E,127 features tight production process control, ensuring the highest level of repeatability and quality in their performance. The technology used in their construction also ensures increased ruggedness, allowing them to take on input voltage transients and other external stresses without suffering damage.The working principle of this type of transistor is that it controls the current flow and voltage level of a circuit by manipulating gate voltage. When gate voltage is applied to the transistor, it will begin to allow current to flow through it. When current passes through the circuit, a certain amount of energy will be dissipated in the form of heat, causing the transistor to become warm. This heat can be managed in a variety of ways, such as increasing the gate voltage level to reduce the current flow or by increasing the resistance of the transistor to reduce the power dissipation. This allows the user to manage and control the voltage and current of their circuit with greater efficiency and accuracy.The BUK753R8-80E,127 can be used for a variety of applications, ranging from low-noise amplifiers to high-speed switching circuits. It can also be used for automotive and power supply applications, as well as in audio amplification and audio filtering. Its excellent thermal performance make it perfect for situations where power needs to be managed efficiently and without compromising the performance of the circuit. Overall, the BUK753R8-80E,127 is an excellent transistor with a wide range of capabilities that make it perfect for use in many different applications. Its excellent thermal performance makes it ideal for use in high-power applications where power needs to be managed accurately and efficiently. Its high-frequency capabilities make it perfect for RF and microwave related applications, while its enhanced ruggedness ensures that it can take on external stresses without suffering damage. This makes it one of the most versatile transistors available on the market today.
The specific data is subject to PDF, and the above content is for reference
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