BUK7Y41-80E/GFX Allicdata Electronics
Allicdata Part #:

BUK7Y41-80E/GFX-ND

Manufacturer Part#:

BUK7Y41-80E/GFX

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH LFPAK
More Detail: Bipolar (BJT) Transistor
DataSheet: BUK7Y41-80E/GFX datasheetBUK7Y41-80E/GFX Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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The BUK7Y41-80E/GFX is a Transistors - Bipolar (BJT) - Single type of transistor device. It is available in a TO-220 package with Markings 3E. The transistor is formed with a combination of the three semiconductor layers: the base, emitter, and collector layers. It is a three-terminal device that uses the properties of semiconductors within its various layers to create an electrical connection in order to control the current within a circuit. The BUK7Y41-80E/GFX comes in two versions: The NPN and the PNP types. The NPN type is used to increase current flow from parameters, while the PNP type is used to decrease current flow from parameters.

The BUK7Y41-80E/GFX is a very powerful and reliable transistor designed for applications that require high performance and long-term reliability. This transistor is commonly used in applications such as automotive, audio, and industrial. Its excellent gain bandwidth product, minimum collector-emitter saturation voltage, and good reverse transfer capacitance characteristics make it suitable for use in a wide range of applications. The device can handle up to 35 Watt at peak power.

The working principle of the BUK7Y41-80E/GFX is based on the transistor operation. A transistor typically has three terminals, which are the emitter (E), the base (B), and the collector (C). It works by manipulating the current flow through the terminals with the help of a small current entering the base. This current entering the base is called the bias current. When the bias current increases, the amount of current flowing between the emitter and the collector also increases. This is known as the amplification process.

In terms of the application field of the BUK7Y41-80E/GFX, this device is ideal for circuits that require high power in a small space. It is suitable for use in a wide range of applications such as automotive, audio, and industrial devices. The device has a power dissipation of up to 35 Watts at peak power, making it an ideal choice for many high-power applications. The device also has excellent gain, making it an ideal choice for high frequency signal applications.

In conclusion, the BUK7Y41-80E/GFX is a reliable and powerful Transistors - Bipolar (BJT) - Single type of transistor. It has excellent gain bandwidth product, minimum collector-emitter saturation voltage, and good reverse transfer capacitance, making it suitable for use in a wide range of applications. The device can handle up to 35 Watt at peak power, making it an ideal choice for many high-power applications. Additionally, its application field includes automotive, audio, and industrial devices. The working principle of the transistor is based on manipulating the current flow through the device with the help of a small current entering the base, which is called the bias current.

The specific data is subject to PDF, and the above content is for reference

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