Allicdata Part #: | BUK9Y30-75B/C1,115-ND |
Manufacturer Part#: |
BUK9Y30-75B/C1,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH LFPAK |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | BUK9Y30-75B/C1,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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BUK9Y30–75B/C1,115 is a transistor, specifically a monolithic, an integrated medium power transistor. A transistor is a semiconductor device that controls current and voltage, it generally functions as an amplifier or switch. BUK9Y30–75B/C1,115 is part of the family of ‘bipolar’ transistors, also referred to as BJT transistors. These transistors are created with two terminal P-N junction semiconductors, either silicon or germanium, which essentially acts as a switch, as determined by the application of current. The transistor is then generally divided into NPN (Negative Positive Negative) and PNP (Positive Negative Positive) transistors. The BUK9Y30–75B/C1,115 model is of an NPN transistor.
The BUK9Y30–75B/C1,115 typically falls within the transistor power range of 0.4 V to 40V, at junction temperatures ranging from -65° to 150° C. Categorised as a low noise type bipolar transistor, the kit is subject to a maximum collector current of 2 A. The BUK9Y30–75B/C1,115 is most commonly found in audio frequency amplifiers, and is able to withstand a maximum collector-emitter voltage of 115V. As a low-noise type transistor, the BUK9Y30–75B/C1,115 is designed with various features, such as improved noise immunity (improved EMI), automotive grade temperature range (-40 to +85°C), and an effective suppression of cross-conduction losses.
The basic principle of the bipolar transistor amplifies the initial input signal (current, voltage, etc). BUK9Y30–75B/C1,115 has 3 main connections, the collector (C), the base (B) and the emitter (E). The current that is driven through the base typically causes the current flow through collector and emitter junctions. The most commonly referred to features of the bipolar transistor are its amplification factor also known as ‘beta’ this is the current gain. Another feature of the transistor and more specifically the BUK9Y30–75B/C1,115, is its base current amplification factor, typically referred to as ‘hfe’. This can be defined as the gain in current, and the value of ‘hfe’ doubles with increased collector current.
In conclusion, BUK9Y30–75B/C1,115 is a type of low-noise bipolar transistor widely used in audio frequency amplifiers and other applications as it is capable of withstanding a maximum collector–emitter voltage of 115V and a maximum collector current of 2A. The watts dissipated by the transistor are dependent upon the package type and the junction temperature, but typically falls within the 0.4 V to 40V range. The current gain, referred to as ‘beta’ has varying values for different operating conditions. For the BUK9Y30–75B/C1,115, the base current is then amplified by the current gain, often referred to as ‘hfe’, and the base current is what drives the transistor.
The specific data is subject to PDF, and the above content is for reference
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