| Allicdata Part #: | 1727-3929-2-ND |
| Manufacturer Part#: |
BUK92150-55A,118 |
| Price: | $ 0.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 55V 11A DPAK |
| More Detail: | N-Channel 55V 11A (Tc) 36W (Tc) Surface Mount DPAK |
| DataSheet: | BUK92150-55A,118 Datasheet/PDF |
| Quantity: | 20000 |
| 2500 +: | $ 0.16059 |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 36W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 338pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 5V |
| Series: | Automotive, AEC-Q101, TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 125 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The BUK92150-55A is a type of Field Effect Transistor (FET) that is categorized as a single MOSFET (Metal Oxide Semiconductor FET). The FET is often used in applications such as amplifiers, voltage regulators and digital circuits where fast switching signals are needed. The BUK92150-55A has a drain-source breakdown voltage of 130V and a maximum drain current of 40A.
FETs are voltage-controlled devices that act as an electronically controlled switch or amplifier. FETs are made up of three terminals: gate, drain and source. The gate is used to control the amount of current flowing between the source and drain. A small amount of current applied to the gate is enough to control the drain-source current, which makes FETs very useful for applications that require a high degree of current control.
MOSFETs, like the BUK92150-55A, are a type of FET that uses a metal oxide semiconductor layer as a gate insulator. This layer is electrically insulating, which means that very little current is required to control the drain-source current. This makes MOSFETs well suited for applications where power dissipation is an issue, such as mobile phones and tablets.
The BUK92150-55A is a single MOSFET, meaning that it has just one gate terminal and two source and drain terminals. When a positive voltage is applied to the gate terminal, it “turns on” the transistor, allowing current to flow between the drain and source terminals. The current flow is controlled by the voltage applied to the gate terminal. A higher voltage will cause more current to flow, while a lower voltage will cause less current to flow.
The BUK92150-55A is a general-purpose MOSFET and can be used for a variety of applications, such as audio amplifiers, amplifying discrete signals from sensors, power amplifiers, voltage regulation, DC to DC converters, motor speed control and many other switching applications. It is well suited for applications that require low power dissipation and high input impedance. The BUK92150-55A is widely used in a variety of electronic circuits.
The BUK92150-55A is an excellent choice for applications that require low power dissipation, high input impedance and fast switching speeds. It is easy to use and highly reliable, making it a popular choice for electronics designers. The BUK92150-55A is a versatile transistor that can be used in a variety of applications. It is an ideal choice for a wide range of applications due to its low cost and high performance.
The specific data is subject to PDF, and the above content is for reference
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BUK92150-55A,118 Datasheet/PDF