BUK9Y43-60E,115

Vgs(th) (Max) @ Id:	2.1V @ 1mA
Package / Case:	SC-100, SOT-669, 4-LFPAK
Supplier Device Package:	LFPAK56, Power-SO8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	880pF @ 25V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	8.2nC @ 5V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	41 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	22A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to BUK9Y43-60E,115

The BUK9Y43-60E,115 is a part of a family of transistors known as Field Effect Transistors (FETs). FETs are transistors that use an electric field to control the flow of current between two terminals. They are more commonly known as Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). Specifically, the BUK9Y43-60E,115 is a single MOSFET.

Application Field

The BUK9Y43-60E,115 is usually used in power control applications, due to its higher current handling capability and fast switching speed. It is widely used in power switching circuits and DC/DC converters such as voltage regulators, motor control circuits and battery chargers. It is also used in digital circuits such as buffer amplifiers, audio amplifiers and analog gates.

Working Principle

The BUK9Y43-60E,115 has three terminals; Gate, Source, and Drain. When a voltage is applied to the Gate terminal, it creates an electric field, which attracts the electrons from the source terminal to the drain terminal. This creates a conducting channel between the two terminals and allows current to flow. The size of this conducting channel is controlled by the voltage applied to the gate terminal. By varying the voltage, the current flow can be adjusted, thus allowing the BUK9Y43-60E,115 to be used for power control or switching operations.

Structure

The BUK9Y43-60E,115 is a single MOSFET, meaning that it has a single conducting channel. It is a vertical MOSFET, meaning that the Gate, Source and Drain are all located on the same substrate. The different layers that make up the BUK9Y43-60E,115 are the Substrate, the Gate Insulator, the Gate Electrode, the Source Contact, the Channel, the Drain Contact and the Metal Contacts.

Conclusion

The BUK9Y43-60E,115 is a single MOSFET that is typically used for power control applications. It has three terminals; Gate, Source, and Drain, and works by creating an electric field that attracts electrons from the source terminal to the drain terminal, creating a conducting channel between them. As the voltage applied to the gate terminal is varied, the current flow is adjusted, thus allowing the BUK9Y43-60E,115 to be used for power control and switching operations.

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