Allicdata Part #: | 568-5731-5-ND |
Manufacturer Part#: |
BUK9529-100B,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 46A TO220AB |
More Detail: | N-Channel 100V 46A (Tc) 157W (Tc) Through Hole TO-... |
DataSheet: | BUK9529-100B,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 157W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4360pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 46A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK9529-100B,127 is a single N-channel enhancement mode field-effect transistor (MOSFET) that is applicable to a variety of power control and switching applications. It is a highly efficient, low-cost solution for power control and switching, and is a popular choice among electronics engineers due to its simple, robust construction and ease of use.
At the heart of the BUK9529-100B,127 is a single N-channel MOSFET which works as a kind of electronic switch, capable of rapidly switching electric current from one endpoint to the other. The device is controlled by a voltage signal at its gate that determines whether the current is allowed to flow or not.
Typically the BUK9529-100B,127 is employed in power switch control applications in industrial, automotive and consumer electronics. The device is most commonly used as a power switch for electric motors, hydraulic valves, and battery powered applications including electric vehicles and home energy applications.
The BUK9529-100B,127 has a typical source-drain breakdown voltage of 50V and a drain-source on-state resistance of 0.3 Ω, making it suitable for switching medium to high loads. It has an impressive maximum safe operating temperature of 175 °C, allowing it to be used in applications subject to high temperatures, such as automotive and industrial environments.
The BUK9529-100B,127 employs an enhancement mode design, meaning that it can be operated with very low power consumption. This makes it an efficient, cost effective solution for controlling high currents and can be used in battery powered and other low power applications.
The BUK9529-100B,127 is designed to be used with a wide range of gate voltages, from -2 volts to 16 volts. This is intended to provide versatility for application in different operating environments. For example, in automotive applications, where the voltage of the battery can vary from 8 to 16 volts, the device can still be used.
In terms of its basic characteristics, the BUK9529-100B,127 has an on state drain current of 400mA and a total gate charge of 2.2-1.6nC, making it suitable for consumer as well as industrial applications. Lastly, the device has a typical turn off time of 13ns, making it an excellent choice for applications in which quick switching is required.
In short, the BUK9529-100B,127 is a versatile, single N-channel MOSFET suitable for a variety of power control and switching applications across industries. Able to rapidly switch electric current from one endpoint to the other, it is a highly efficient, low-cost solution that is easy to use and robustly constructed.
The specific data is subject to PDF, and the above content is for reference
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