BUK9880-55A/CUX Allicdata Electronics
Allicdata Part #:

1727-2230-2-ND

Manufacturer Part#:

BUK9880-55A/CUX

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 55V 7A SOT223
More Detail: N-Channel 55V 7A (Tc) 8W (Tc) Surface Mount SOT-22...
DataSheet: BUK9880-55A/CUX datasheetBUK9880-55A/CUX Datasheet/PDF
Quantity: 8000
Stock 8000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 73 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BUK9880-55A/CUX is a single N-Channel Mosfet produced by NXP. It is a high voltage insulated gate bipolar transistor (IGBT) with high energy density, so it is designed for military and industrial applications, such as medium and high voltage multi-level inverters and motor drives.

The main electrical characteristics of the BUK9880-55A/CUX include fast dynamic properties, low turn-on and turn-off times, and the ability to provide power switching with voltage and current control. The fast dynamic properties enable the quick switching times and the low turn-on and turn-off times enable instant switching of the device on and off.

The BUK9880-55A/CUX is an insulated gate bipolar transistor with an N-channel enhancement type MOSFET. This device has a variety of features that make it unique and suitable for several applications. The IGBT has self-contained electrostatic protection for avalanche and short-circuit protection. It has a module-level self-protection feature, which enables it to shut down in the event of a load or other fault condition.

The BUK9880-55A/CUX also has an additional parameter that makes it suitable for a variety of applications – its high junction temperature rating. Thanks to this feature, the device can perform reliably even at temperatures up to 150°C.

The working principle of the BUK9880-55A/CUX device is based on the transistor field-effect principle. This transistor employs an N-channel MOSFET. This MOSFET has two channels through which current can flow, and the device also has high-voltage components that allow for better efficiency when switching with high voltage and current.

The transistor field-effect principle is based on the fact that, when a voltage is applied to the gate of the transistor, it forces the gate regions of the MOSFET to change their capacitances. This creates an electric field, which in turn creates a current flow that is proportional to the voltage applied. This current flow, referred to as gate current, controls the flow of current through the transistor.

The BUK9880-55A/CUX is a highly reliable device that is suitable for many high-voltage, high-energy applications. Its high junction temperature rating makes it suitable for applications where temperatures can become high, and its fast dynamic properties, low turn-on and turn-off times, and excellent output power make it a great choice for other applications as well.

The specific data is subject to PDF, and the above content is for reference

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