BUK9E3R2-40B,127 Allicdata Electronics
Allicdata Part #:

568-6639-5-ND

Manufacturer Part#:

BUK9E3R2-40B,127

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 40V 100A I2PAK
More Detail: N-Channel 40V 100A (Tc) 300W (Tc) Through Hole I2P...
DataSheet: BUK9E3R2-40B,127 datasheetBUK9E3R2-40B,127 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchMOS™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 10502pF @ 25V
FET Feature: --
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Description

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The BUK9E3R2-40B,127 is one of the advanced type of transistors, also called field-effect transistors (FETs). It is a single MOSFET, meaning that it contains only one active terminal, which is commonly referred to as the gate. The other two terminals are the drain and the source. The BUK9E3R2-40B,127 is a high current, low voltage, feature-rich device, making it suitable for a wide range of applications.

The BUK9E3R2-40B,127 has a wide range of applications, primarily in power electronics. It can be used for switching, amplification, and even some low-level analog circuit applications. Furthermore, it can be used to control currents and voltages in power electronics and motor controllers, making it ideal for motor-related applications. It is also suitable for a variety of other applications, such as voltage-regulated circuits, DC-DC converters, and AC motor drives.

The primary working principle behind the BUK9E3R2-40B,127 is the fact that it is a voltage-controlled device. By applying an external voltage to the gate terminal, the electric field between the drain and source of the device can be increased or decreased. This electric field, in turn, controls the electric current and voltage between the drain and source of the device. The size of this electric field is directly proportional to the frequency of the applied voltage, and it can also be adjusted through the gate voltage.

In summary, the BUK9E3R2-40B,127 is a single MOSFET with a wide range of applications in both power electronics and motor controllers. Its primary working principle is the fact that it is a voltage-controlled device, allowing for adjustment of the electric field between the drain and source of the device. This allows for improved current and voltage control, as well as improved efficiency in a variety of power applications.

The specific data is subject to PDF, and the above content is for reference

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