Allicdata Part #: | 568-6639-5-ND |
Manufacturer Part#: |
BUK9E3R2-40B,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 40V 100A I2PAK |
More Detail: | N-Channel 40V 100A (Tc) 300W (Tc) Through Hole I2P... |
DataSheet: | BUK9E3R2-40B,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 94nC @ 5V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 10502pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAK |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK9E3R2-40B,127 is one of the advanced type of transistors, also called field-effect transistors (FETs). It is a single MOSFET, meaning that it contains only one active terminal, which is commonly referred to as the gate. The other two terminals are the drain and the source. The BUK9E3R2-40B,127 is a high current, low voltage, feature-rich device, making it suitable for a wide range of applications.
The BUK9E3R2-40B,127 has a wide range of applications, primarily in power electronics. It can be used for switching, amplification, and even some low-level analog circuit applications. Furthermore, it can be used to control currents and voltages in power electronics and motor controllers, making it ideal for motor-related applications. It is also suitable for a variety of other applications, such as voltage-regulated circuits, DC-DC converters, and AC motor drives.
The primary working principle behind the BUK9E3R2-40B,127 is the fact that it is a voltage-controlled device. By applying an external voltage to the gate terminal, the electric field between the drain and source of the device can be increased or decreased. This electric field, in turn, controls the electric current and voltage between the drain and source of the device. The size of this electric field is directly proportional to the frequency of the applied voltage, and it can also be adjusted through the gate voltage.
In summary, the BUK9E3R2-40B,127 is a single MOSFET with a wide range of applications in both power electronics and motor controllers. Its primary working principle is the fact that it is a voltage-controlled device, allowing for adjustment of the electric field between the drain and source of the device. This allows for improved current and voltage control, as well as improved efficiency in a variety of power applications.
The specific data is subject to PDF, and the above content is for reference
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