BUK9535-100A,127 Allicdata Electronics
Allicdata Part #:

BUK9535-100A,127-ND

Manufacturer Part#:

BUK9535-100A,127

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V 41A TO220AB
More Detail: N-Channel 100V 41A (Tc) 149W (Tc) Through Hole TO-...
DataSheet: BUK9535-100A,127 datasheetBUK9535-100A,127 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 149W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3573pF @ 25V
Vgs (Max): ±10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 34 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The BUK9535-100A is a single N-channel Power MOSFET with a mounting case that is designed for use as a switching device in industrial, commercial, and consumer applications. The MOSFET has a maximum drain-source voltage of 100 V and a nominal drain current of 30 A, with a maximum drain-source on-state resistance of 0.03 ohm. This MOSFET is ideal for switching loads with low gate drive requirements.

A Power MOSFET, such as the BUK9535-100A, is a voltage-controlled field-effect transistor (FET) that is used in power electronics and power conversion applications. It is a three-terminal device composed of a source, a drain, and a gate. It has a low gate-source voltage and a low on-state resistance (RDS) when it is operated in the linear region. Power MOSFETs use either an N-channel (n-MOSFET) or a P-channel (p-MOSFET) type of FET, and the BUK9535-100A is an n-MOSFET.

The gate voltage controls the current flowing between the source and the drain. When the gate voltage is applied, the channel is attracted by the electric field, and electrons become mobile. When an n-MOSFET is used the electrons flow from the source to the drain, and when a p-MOSFET is used the holes (absence of electrons) flow from the source to the drain. The current passing through the channel is controlled by the gate voltage.

The BUK9535-100A has an RDS (on-state resistance) of 0.03 ohm, allowing it to perform with higher efficiency and less power loss than other MOSFETs. This makes it ideal for use in power supply, motor control and other applications that require high efficiency. The MOSFET can be used in a variety of applications including power supplies, motor drives, high-speed switching, and audio amplifiers.

Due to its low RDS(on) and high current rating, the BUK9535-100A can be used in a wide range of industrial and automotive applications. It is often used in motor control and power supply applications, as well as high-power switching applications. The MOSFET can be used to switch inductive, capacitive, and resistive loads, and can handle high surge current without causing damage to the MOSFET itself. It also has a low gate capacitance and ESD protection that makes it suitable for use in high-frequency circuits.

In addition, the device has excellent thermal management which helps to extend the life of the MOSFET. The device has a planar footprint making it suitable for use on a printed circuit board (PCB) and the package is RoHS compliant, making it environmentally friendly and safe for use in commercial and industrial applications.

The BUK9535-100A is a versatile and robust MOSFET that is designed to perform in a wide range of industrial, commercial, and consumer applications. It is an excellent choice for switching inductive, capacitive, and resistive loads with low gate drive requirements, as well as for high-speed switching and motor control applications. It also provides excellent ESD and thermal protection, making it suitable for use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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