Allicdata Part #: | BUK9Y2R4-40HX-ND |
Manufacturer Part#: |
BUK9Y2R4-40HX |
Price: | $ 0.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | BUK9Y2R4-40H/SOT669/LFPAK |
More Detail: | |
DataSheet: | BUK9Y2R4-40HX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.44937 |
Series: | -- |
Part Status: | Active |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
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BUK9Y2R4-40HX is a power MOSFET device. It\'s a single n-channel enhancement mode power field effect transistor. The device is majorly used in applications ranging from switching, small signal amplification to speed control. Its maximum drain-source voltage rating is 40 V, drain current rating is 9 A, and drain-source on-state resistance is 2.4 ohms. The device also has a high input impedance and a low gate drive power requirement.
Applications of BUK9Y2R4-40HX include motor drive, DC-DC converters, AC adapters, power management, computer power, and other power electronic applications. It is mainly used for controlling the switching within high-power electronic devices such as AC adapters, power managers, and others. It is useful in switching applications such as on/off architectures and is used in DC to DC converters, AC adapters, power management, computer power, and other power electronic applications.
BUK9Y2R4-40HX device is a Field Effect Transistor (FET) which works by applying the electric field to the gate terminal. FETs are widely used as a power switch and amplifier in both analog and digital circuits. The main advantage of a FET is its ability to operate with very low input bias currents.
The working principle of BUK9Y2R4-40HX is that when the applied voltage to the gate reaches the threshold voltage, a channel of electrons forms between the source and the drain. This channel comprises the two ends of the transistor, enabling current to flow from the source to the drain. This process is known as enhancement mode. The on-state resistance depends mainly on the drain-source voltage, the length of the channel, and the threshold voltage of the device.
BUK9Y2R4-40HX is a single-channel enhancement mode power field effect transistor, which is widely used in many high-power switches and amplifiers. It has a wide range of applications, ranging from switching, small signal amplification to speed control. The main advantage of this device is its low input bias current, making it ideal for high power applications.
The specific data is subject to PDF, and the above content is for reference
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