BUK961R4-30E,118

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The BUK961R4-30E,118 is a single metal-oxide-semiconductor field-effect transistor (MOSFET) that can be used in a variety of applications and is manufactured by NXP. This MOSFET features an industry-standard 298-mil SO-8 package and is designed to be used in horizontal or vertical surface mount applications. It is the ideal choice for applications needing low gate charge and low gate-source capacitance for excellent switching performance. This MOSFET is suitable for use in a variety of applications, including automotive, industrial, and medical.

The BUK961R4-30E,118 is a N-channel MOSFET. It has a drain-source voltage (VDS) rating of 30 volts, a drain-source current (ID) rating of 28.4 A, and a rDS(on) rating of 4.4 ohms. The device has a gate-source voltage rating (VGS) of 10 volts, a drain-source breakdown voltage (BVDSS) of 120 volts and a maximum junction temperature (Tj) rating of 150°C.

The MOSFET has a single gate which controls the flow of current between the drain and source terminals. When the gate is forward biased (positive relative to the source), the MOSFET is “on”, allowing current to flow from the drain to the source. When the gate is reverse biased (negative relative to the source), the MOSFET is “off”, preventing current flow. This allows the MOSFET to be used as an on/off switch and enables the control of current in a circuit.

The BUK961R4-30E,118 is a versatile device and can be used in a variety of applications. It can be used in power switching circuits to control the flow of large currents, such as in motor control and DC-DC converters. It can also be used in power supplies, amplifiers and lighting circuits. Additionally, it can be used as an additional safety element in current limiter circuits and over-voltage protection circuits.

Due to its high current-handling capability, fast switching characteristics and low gate charge, the BUK961R4-30E,118 is an excellent choice for a variety of applications. It is a reliable, durable and cost-effective MOSFET that can meet the most demanding requirements. This MOSFET is a great choice for engineers and designers who need to quickly and reliably switch large currents in their circuit designs.

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