| Allicdata Part #: | 568-9748-5-ND |
| Manufacturer Part#: |
BUK9509-75A,127 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | MOSFET N-CH 75V 75A TO220AB |
| More Detail: | N-Channel 75V 75A (Tj) 230W (Tc) Through Hole TO-2... |
| DataSheet: |  BUK9509-75A,127 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 230W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 8840pF @ 25V |
| Vgs (Max): | ±10V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tj) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The BUK9509-75A,127 is a single power metal-oxide-silicon field-effect transistor (MOSFET) designed for applications in industrial and communication sectors. It has a wide range of applications and allows for efficient power conversion and energy savings. This article will discuss the application field, working principle and performance of the BUK9509-75A,127.
Application Field
The BUK9509-75A,127 MOSFET is suitable for a wide range of applications, including:- Power supply systems
- Switch mode power supplies
- Uninterruptible power supplies
- Solar inverters and power conditioners
- Battery charging
- Motor control
- Railway traction systems
- Lighting systems
- Industrial electronics
- Communications and broadband technologies
Working Principle
The BUK9509-75A,127 MOSFET is based on the metal-oxide-silicon field-effect transistor (MOSFET) technology. The device uses a silicon substrate that acts as a semiconductor material to control the flow of current. It uses a gate voltage to control the current flow through the device.When the gate voltage is high, a large electric field is created between the gate and the substrate, which attracts electrons from the substrate material. This effect is known as the “inversion layer” and it increases the conductivity of the device, allowing for current to flow. When the gate voltage is low, the field is reduced and the current flow is reduced as well.Performance
The BUK9509-75A,127 MOSFET has a maximum drain current of 75A, a maximum drain-source voltage of 200V and a maximum output power of 7500W. It has an on-resistance of 2.8mohm, a threshold voltage of -1V and a gate capacitance of 115pF.The device is also designed with a long lifetime and high reliability. It is capable of withstanding high temperatures and has a guaranteed junction-to-ambient thermal resistance of 30°C/W. The BUK9509-75A,127 MOSFET also has a high current density of 150A/mm2.Conclusion
The BUK9509-75A,127 is a single power MOSFET designed for power conversion and energy saving applications. It is suitable for a wide range of applications, including power supply systems, switch mode power supplies, uninterruptible power supplies, solar inverters and power conditioners, and more. The device has a low gate threshold voltage and an optimized on-resistance and is capable of withstanding high temperatures. It has a maximum drain current of 75A, a maximum drain-source voltage of 200V and a maximum output power of 7500W.The specific data is subject to PDF, and the above content is for reference
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