BUK98150-55/CUF Allicdata Electronics
Allicdata Part #:

1727-2223-2-ND

Manufacturer Part#:

BUK98150-55/CUF

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 55V 5.5A SOT223
More Detail: N-Channel 55V 5.5A (Tc) 8.3W (Tc) Surface Mount SO...
DataSheet: BUK98150-55/CUF datasheetBUK98150-55/CUF Datasheet/PDF
Quantity: 4000
4000 +: $ 0.09767
Stock 4000Can Ship Immediately
$ 0.11
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8.3W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Vgs (Max): ±10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 150 mOhm @ 5A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BUK98150-55/CUF is a n-channel enhancement mode Field Effect Transistor (FET) that is commonly utilized in many different applications for its superior performance. This device is a power MOSFET and is characterized by low on-resistance, low gate charge, and low input and output capacitance. It features high-gain and low-voltage operation, making it an ideal choice for many low-voltage applications. The device is manufactured using advanced technology which provides superior performance and reliability.

The BUK98150-55/CUF utilizes a number of different components including a gate, an insulated gate, a source, a drain, and a body. The gate of the device primarily controls the flow of current in the device. The insulated gate is used to reduce the on-resistance of the gate by providing a gate-source voltage bias. The source and drain provide the path for current flow in and out of the device. And finally, the body helps to control current flow by providing an additional voltage source.

The BUK98150-55/CUF has a number of different application fields, including power conversion, motor control, audio devices, lighting, and automotive applications. In power conversion applications, the device is used as a low-noise, low-power switch. The low on-resistance allows it to switch quickly and efficiently and its low gate charge ensures that the device consumes minimal power when operating. In addition, the low input and output capacitance also mean that it consumes less power when switching compared to other MOSFETs. In motor control applications, the device is used to control the speed and torque of a motor. It is also highly suitable for use in audio devices due to its low-noise operation.

The working principle of the BUK98150-55/CUF is based around the concept of charge transfer. As a result, it produces a low on-state and off-state resistance, low on-resistance and gate charge, and low input and output capacitance. When a voltage is applied to the gate of the device, a voltage drop is observed as a result of the charge transfer process. This voltage drop causes the MOSFET to turn on and increase the current flow in the device. Conversely, when the voltage is removed from the gate of the device, the voltage drop is reversed and the MOSFET turns off, reducing the current flow in the device. In this way, the device can be used to control the flow of current in a number of different applications.

The BUK98150-55/CUF is an extremely versatile and reliable device that provides superior performance in many different application fields. It is characterized by low on-resistance, low gate charge, and low input and output capacitance. In addition, the device has a number of different application fields, including power conversion, motor control, audio devices, lighting, and automotive applications. The working principle of the device is based around the concept of charge transfer, allowing it to produce a low on-state and off-state resistance, low on-resistance and gate charge, and low input and output capacitance.

The specific data is subject to PDF, and the above content is for reference

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