
Allicdata Part #: | 1727-2581-2-ND |
Manufacturer Part#: |
BUK9M42-60EX |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 22A LFPAK |
More Detail: | N-Channel 60V 22A (Tc) 44W (Tc) Surface Mount LFPA... |
DataSheet: | ![]() |
Quantity: | 1500 |
1 +: | $ 0.16000 |
10 +: | $ 0.15520 |
100 +: | $ 0.15200 |
1000 +: | $ 0.14880 |
10000 +: | $ 0.14400 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SOT-1210, 8-LFPAK33 (5-Lead) |
Supplier Device Package: | LFPAK33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 44W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 867pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 37 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK9M42-60EX is part of the N-channel Enhancement Mode MOSFET family. It is a small deivce ideal for power switching applications. It is designed with good attenuation performance and low total gate charge, offering superior energy efficiency. This allows for greater system efficiency when properly utilized.
The BUK9M42-60EX has two terminals – the Drain and Source. The Drain is connected to the positive supply, which leads to the other terminal, the Source. This Source is connected to the negative supply, or ‘ground’. The voltage between the Drain and the Source controls the on/off of the MOSFET. The voltage applied to the Gate of the MOSFET determines whether it is in the on or off states. When the transistor turns on (the Gate voltage is high), current flows through the transistor, allowing it to provide the desired power switching. When the Gate voltage is low, there is no current. The advantage to this type of transistor is that it doesn’t heat up as much as a regular transistor and it can handle much higher voltages than other types.
The BUK9M42-60EX has features such as an 8.5V Gate-Source Breakdown Voltage and a maximum of 133A Drain-Source Continuous Drain Current. It also comes in 6 different packages, depending on the amount of power switching needed. All of its features make it well suited for a variety of power switching applications.
Some of the applications where the BUK9M42-60EX can be used include power supplies, DC motors, servo controls, LED drivers, and various other industrial and embedded systems in need of power switching. It can also be used as a high-side switch to allow power to be switched without the need to manually disconnect components. This makes it an ideal choice for any system where power needs to be switched quickly and reliably.
The working principle of the BUK9M42-60EX is relatively simple. Applying a voltage to the Gate of the MOSFET causes the voltage on the Source to also increase, thus allowing the transistor to be turned on or off depending on the voltage level. When the Gate voltage is reduced, the current flow through the transistor is also reduced, thus turning it off. This makes it a great choice for power switching applications where fast switching times and high voltage and current capabilities are needed.
In conclusion, the BUK9M42-60EX is a high performance N-channel Enhancement Mode MOSFET capable of excellent power switching. It has a wide array of features and applications, making it a great choice for a variety of system designs. Its ease of use and fast switching times make it especially attractive for industrial and embedded systems that require reliable and efficient power switching.
The specific data is subject to PDF, and the above content is for reference
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