Allicdata Part #: | 1727-7228-ND |
Manufacturer Part#: |
BUK9907-40ATC,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 75A TO220AB |
More Detail: | N-Channel 40V 75A (Tc) 272W (Tc) Through Hole TO-2... |
DataSheet: | BUK9907-40ATC,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 5836pF @ 25V |
FET Feature: | Temperature Sensing Diode |
Power Dissipation (Max): | 272W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-5 |
Package / Case: | TO-220-5 |
Description
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Introduction to BUK9907-40ATC,127BUK9907-40ATC,127 is a n-channel enhancement mode vertical DMOS Field Effect Transistor (FET), using the high voltage VDMOS technology. It has been designed for use in high voltage applications. Its target applications are mainly product designs intended for power management in the industrial, automotive, telecommunications, peripherals and consumer environment, where high levels of integration, robustness and reliability are essential. Features and Benefits of BUK9907-40ATC,127
The BUK9907-40ATC,127 is an attractive option for power management circuits, due to its simple and highly integrated design, which makes it easy to use and integrate into any design. Its features include the following:
- High Drain Source Voltage (VGDS): 600V
- Ultra-low RDS(on): 40 mΩ max @ VGS = 10V
- Wide Gate Voltage Range: -10V to +20V
- Low Gate Leakage (IGSS): 400nA
- High Breakdown Voltage: 200V
- Easy to drive, featuring a low input capacitance (CISS) and low input on-resistance (RDS(on))
- High dV/dt immunity
- High reliability, as the FET is protected by Bipolar technology
- Compact, and capable of being used in thermally challenging environments
The BUK9907-40ATC,127 is mainly used in applications such as motor control, lighting control, power factor correction (PFC) and power switching applications, as it is capable of handling large amounts of power. It is also used in applications where high dielectric strengths and current capacity are required, such as high speed, high frequency applications and high voltage circuits. The working principle of the BUK9907-40ATC,127 is based on the use of a gate electrode to control the current flowing through the n-channel of the FET. When a positive gate voltage is applied, the electrons within the n-channel are repelled by the positive gate voltage, reducing the barrier of the n-channel and allowing current to flow through the channel more freely, thus increasing the current flow. When a negative gate voltage is applied, the electrons within the n-channel are attracted to the negative voltage, increasing the barrier of the n-channel and reducing the current flow. This is the basic principle of the FET, and how the BUK9907-40ATC,127 operates.Conclusion
The BUK9907-40ATC,127 is an n-channel vertical DMOS Field Effect Transistor, which has been designed for use in power management applications, such as motor control, lighting control, PFC and high speed, high frequency applications. It is highly reliable, featuring a high drain source voltage, and a very low RDS(on) at VGS = 10V. Its simple and highly integrated design makes it easy to use and integrate into any design.
The specific data is subject to PDF, and the above content is for reference
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