BUK9907-40ATC,127

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	TO-220-5
Supplier Device Package:	TO-220-5
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	272W (Tc)
FET Feature:	Temperature Sensing Diode
Input Capacitance (Ciss) (Max) @ Vds:	5836pF @ 25V
Vgs (Max):	±15V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	6.5 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction to BUK9907-40ATC,127

BUK9907-40ATC,127 is a n-channel enhancement mode vertical DMOS Field Effect Transistor (FET), using the high voltage VDMOS technology. It has been designed for use in high voltage applications. Its target applications are mainly product designs intended for power management in the industrial, automotive, telecommunications, peripherals and consumer environment, where high levels of integration, robustness and reliability are essential. Features and Benefits of BUK9907-40ATC,127

The BUK9907-40ATC,127 is an attractive option for power management circuits, due to its simple and highly integrated design, which makes it easy to use and integrate into any design. Its features include the following:

• High Drain Source Voltage (VGDS): 600V
• Ultra-low RDS(on): 40 mΩ max @ VGS = 10V
• Wide Gate Voltage Range: -10V to +20V
• Low Gate Leakage (IGSS): 400nA
• High Breakdown Voltage: 200V
• Easy to drive, featuring a low input capacitance (CISS) and low input on-resistance (RDS(on))
• High dV/dt immunity
• High reliability, as the FET is protected by Bipolar technology
• Compact, and capable of being used in thermally challenging environments

Application Fields and Working Principle of BUK9907-40ATC,127

The BUK9907-40ATC,127 is mainly used in applications such as motor control, lighting control, power factor correction (PFC) and power switching applications, as it is capable of handling large amounts of power. It is also used in applications where high dielectric strengths and current capacity are required, such as high speed, high frequency applications and high voltage circuits. The working principle of the BUK9907-40ATC,127 is based on the use of a gate electrode to control the current flowing through the n-channel of the FET. When a positive gate voltage is applied, the electrons within the n-channel are repelled by the positive gate voltage, reducing the barrier of the n-channel and allowing current to flow through the channel more freely, thus increasing the current flow. When a negative gate voltage is applied, the electrons within the n-channel are attracted to the negative voltage, increasing the barrier of the n-channel and reducing the current flow. This is the basic principle of the FET, and how the BUK9907-40ATC,127 operates.Conclusion

The BUK9907-40ATC,127 is an n-channel vertical DMOS Field Effect Transistor, which has been designed for use in power management applications, such as motor control, lighting control, PFC and high speed, high frequency applications. It is highly reliable, featuring a high drain source voltage, and a very low RDS(on) at VGS = 10V. Its simple and highly integrated design makes it easy to use and integrate into any design.

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