BUK9Y11-80EX Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.1V @ 1mA
Package / Case:	SC-100, SOT-669, 4-LFPAK
Supplier Device Package:	LFPAK56, Power-SO8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	194W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6506pF @ 25V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	44.2nC @ 5V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	10 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	84A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The BUK9Y11-80EX is a single transistor that belongs to the family of transistors FETs and MOSFETs. It is designed for a wide range of applications such as power conversion, motor control, and other applications requiring a high power handling capability. In this article, we’ll discuss the application fields and working principles of the BUK9Y11-80EX.The B UK9Y11-80EX is a FET/MOSFET offering as much as 80 A of continuous drain current at 100 °C, as well as a peak current of 200 A. It is designed for high efficiency switched-mode systems where it will be used as a low side switch in applications such as power converters, motor drivers, and other power control circuits.The device is an N-channel MOSFET composed of an epitaxial layer on a silicon substrate. The source and drain regions have a Schottky diode connected between them and the substrate in order to provide reverse polarity protection. The MOSFET also has a voltage protected gate connected directly to the transistor drain, which minimizes the losses compared to other components with comparable features.The BUK9Y11-80EX is designed to be used in applications requiring high power handling capability – up to 200 A peak and 80 A continuous. This makes it suitable for switching applications such as motor drivers and power converters, where high current capability is a must. The device also has built-in protection features such as over temperature, over voltage, and reverse polarity protection, making it a reliable switch for these applications.In addition, the BUK9Y11-80EX has a wide operating range. The device can be operated up to a junction temperature of 250 ºC, which offers excellent temperature tolerance. It is also capable of operating between -55 °C to 175 °C, giving it an extended temperature range.The BUK9Y11-80EX is designed to handle high-frequency switching applications. It has a relatively low output capacitance, as well as a low input capacitance that ensure fast switching performance at high frequency. The device has excellent switching performance and is capable of switching up to 5MHz.The BUK9Y11-80EX is designed for use with a 4.5 V gate-source voltage. This means it is not suitable for high voltage applications, and thus should be used in the context of a low voltage system. It is also designed for operating at a maximum gate charge of 2.4 nC, and the maximum gate-source voltage is 40 V.In terms of circuit design, the BUK9Y11-80EX is suited to a variety of layout and schematic approaches. For example, it can be connected to the circuit in parallel with other components. This ensures that it will not affect the circuit’s performance, as the other components will absorb any additional AC noise due to its high capacitance.In conclusion, the BUK9Y11-80EX is a single N-channel MOSFET offering high current handling capability, built-in protection features, a wide temperature range, and fast switching performance. It is a reliable switch for applications requiring high power handling capability, such as power converters, motor drivers, and other power control circuits. It is designed for use with a 4.5 V gate-source voltage and has a maximum gate charge of 2.4 nC.

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