BUK9616-75B,118

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	157W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4034pF @ 25V
Vgs (Max):	±15V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 5V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	14 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	67A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The BUK9616-75B,118 is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). MOSFETs are used in many different types of applications, from switches to amplifiers and transistors. The BUK9616-75B,118 is a single transistor type MOSFET. It is a high power, dual-gate, normally off type MOSFET.The BUK9616-75B,118 MOSFETs are mostly used in high voltage, high frequency switching applications. It is also used in high power AC to DC and DC to DC switching applications such as in power supplies, inverters, amplifiers, motor control and switching devices. The BUK9616-75B,118 has a high maximum drain-source voltage of up to 800 volts, making it suitable for use in high-power electronic appliances. It has low turn-on and turn-off capacitance, making it very efficient for pulsed applications. With the highest resistance to drain-source breakdown voltage, the BUK9616-75B,118 is ideal for use in power conversion applications.The working principle of the BUK9616-75B,118 MOSFET is based on the metal oxide semiconductor field effect transistor. In this type of MOSFET, the metal oxide is used as the gate insulater. When a voltage is applied to the gate, the electric field generated induces a depletion region in the metal oxide, which acts as a conductive path between the source and drain electrodes. As the voltage applied to the gate is increased, more electrons are induced into the depletion region, thus allowing current to flow between the source and drain electrodes.The BUK9616-75B,118 MOSFETs are generally used in high power applications, as they can handle high voltages and currents. They are ideal for use in power conversion applications due to their high drain-source breakdown voltage and low turn-on and turn-off capacitance. These characteristics also make them a good choice for use in high frequency switching applications. The low drain-source ON resistance and low gate-drain ON resistance make the BUK9616-75B,118 highly efficient for pulsed applications. Additionally, the BUK9616-75B,118 is able to withstand temperatures up to 175°C, making it suitable for use in high-temperature applications.

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